ʻO nā electrodes graphene ultratransparent a hiki ke hoʻolōʻihi ʻia

ʻO nā mea ʻelua-dimensional, e like me ka graphene, he uʻi no nā noi semiconductor maʻamau a me nā noi nascent i nā uila uila. Eia nō naʻe, ʻo ka ikaika tensile kiʻekiʻe o ka graphene ka hopena i ka haʻihaʻi ʻana i ka haʻahaʻa haʻahaʻa, e paʻakikī ai ka hoʻohana pono ʻana i kāna mau waiwai uila ma nā mea uila hiki ke hoʻopololei. I mea e hiki ai ke hoʻokō maikaʻi loa i ka hana i hilinaʻi nui ʻia o nā conductors graphene transparent, ua hana mākou i nā nanoscroll graphene ma waena o nā papa graphene i hoʻopaʻa ʻia, i kapa ʻia he multilayer graphene/graphene scrolls (MGGs). Ma lalo o ke koʻikoʻi, ua hoʻopili kekahi mau ʻōwili i nā ʻāpana ʻāpana o ka graphene no ka mālama ʻana i kahi pūnaewele percolating e hiki ai i ka conductivity maikaʻi loa i nā kuʻuna kiʻekiʻe. ʻO Trilayer MGGs i kākoʻo ʻia ma nā elastomers i mālama ʻia he 65% o kā lākou conductance mua ma 100% strain, e kū pololei ana i ke kuhikuhi o ke kahe o kēia manawa, ʻoiai ʻo nā kiʻi ʻoniʻoni trilayer o graphene me ka ʻole o nā nanoscroll i mālama ʻia he 25% wale nō o kā lākou conductance hoʻomaka. ʻO kahi transistor kalapona holoʻokoʻa hiki ke hoʻohana ʻia me ka MGG ma ke ʻano he electrodes i hōʻike ʻia i kahi transmittance o> 90% a mālama ʻia 60% o kāna puka mua o kēia manawa ma 120% strain (like me ke kuhikuhi o ka lawe uku). Hiki i kēia mau transistors kalapona holoʻokoʻa hiki ke hoʻolōʻihi ʻia a ʻalohilohi.
ʻO nā mea uila uila hiki ke hoʻoikaika ʻia he māla ulu e loaʻa nā noi koʻikoʻi i nā ʻōnaehana biointegrated kiʻekiʻe (1, 2) a me ka hiki ke hoʻohui pū me nā optoelectronics stretchable (3, 4) e hana i nā robotics palupalu a me nā hōʻike. Hōʻike ʻo Graphene i nā waiwai i makemake nui ʻia o ka mānoanoa atomika, ke aniani kiʻekiʻe, a me ka conductivity kiʻekiʻe, akā ua kāohi ʻia kona hoʻokō ʻana i nā noi stretchable ma muli o kona ʻano e haki i nā mea liʻiliʻi. ʻO ka lanakila ʻana i nā palena mechanical o ka graphene hiki ke hoʻohana i nā hana hou i nā hāmeʻa alohilohi.
ʻO nā waiwai kūʻokoʻa o ka graphene e lilo ia i moho ikaika no ka hanauna hou o nā electrodes conductive transparent (5, 6). Ke hoʻohālikelike ʻia me ka mea hoʻoheheʻe ʻike maʻamau i hoʻohana ʻia, indium tin oxide [ITO; ʻO 100 ohms/sq (sq) ma 90% transparency ], monolayer graphene i ulu ʻia e ke kinikini mahu (CVD) ka hui like ʻana o ka pale pale (125 ohms/sq) a me ke aniani (97.4%) (5). Eia kekahi, ʻoi aku ka maʻalahi o nā kiʻi graphene i hoʻohālikelike ʻia me ITO (7). No ka laʻana, ma ka substrate plastic, hiki ke hoʻopaʻa ʻia kona conductance no ka radius piko o ka curvature liʻiliʻi e like me 0.8 mm (8). No ka hoʻonui hou ʻana i kāna hana uila ma ke ʻano he mea hoʻokele maʻalahi, ua hoʻomohala nā hana mua i nā mea graphene hybrid me hoʻokahi-dimensional (1D) nanowires kālā a i ʻole carbon nanotubes (CNTs) (9-11). Eia kekahi, ua hoʻohana ʻia ka graphene e like me nā electrodes no nā semiconductor heterostructural mixed dimensional (e like me 2D bulk Si, 1D nanowires/nanotubes, a me 0D quantum dots) (12), nā transistors maʻalahi, nā pūnaewele lā, a me nā kukui-emitting diodes (LED) (13). –23).
ʻOiai ua hōʻike ʻo graphene i nā hopena hoʻohiki no nā mea uila maʻalahi, ua kaupalena ʻia kāna noi ʻana i nā mea uila hikiwawe e kona mau waiwai mechanical (17, 24, 25); He 340 N/m ka ʻoʻoleʻa i loko o ka mokulele a me ka modulus Young o 0.5 TPa (26). ʻAʻole hāʻawi ka ʻupena kalapona kalapona ikaika i nā mīkini hoʻoheheʻe ikehu no ke kānana i hoʻopili ʻia a no laila hiki iā ia ke haki ma lalo o 5% strain. No ka laʻana, hiki i ka CVD graphene i hoʻoili ʻia ma luna o ka polydimethylsiloxane (PDMS) elastic substrate hiki ke mālama i kona conductivity ma lalo o 6% strain (8). Hōʻike nā hoʻohelu kumu ʻo ka crumpling a me ka hui ʻana ma waena o nā papa like ʻole e hoʻemi ikaika i ka ʻoʻoleʻa (26). Ma ka hoʻopaʻa ʻana i ka graphene i loko o nā ʻāpana he nui, ua hōʻike ʻia e hiki ke hoʻolōʻihi ʻia kēia graphene bi- a i ʻole trilayer graphene i 30% strain, e hōʻike ana i ka loli kūʻē ʻana he 13 mau manawa liʻiliʻi ma mua o ka monolayer graphene (27). Eia nō naʻe, ʻoi aku ka haʻahaʻa o kēia stretchability ma mua o nā mea hoʻoheheʻe c stretchable (28, 29).
He mea koʻikoʻi nā transistors i nā noi stretchable no ka mea hiki iā lākou ke heluhelu i ka sensor maʻalahi a me ka loiloi hōʻailona (30, 31). Hiki i nā transistors ma PDMS me ka graphene multilayer ma ke ʻano he kumu/drain electrodes a me nā mea channel hiki ke mālama i ka hana uila a hiki i ka 5% strain (32), ʻo ia ka mea ma lalo o ka waiwai haʻahaʻa i koi ʻia (~ 50%) no nā mea ʻike olakino hiki ke hoʻohana a me ka ʻili uila. 33, 34). I kēia mau lā, ua ʻimi ʻia kahi ala graphene kirigami, a hiki ke hoʻolōʻihi ʻia ka transistor i hoʻopaʻa ʻia e ka wai electrolyte a hiki i ka 240% (35). Eia nō naʻe, pono kēia ʻano hana i ka graphene i hoʻopanee ʻia, kahi mea e paʻakikī ai ke kaʻina hana.
Ma ʻaneʻi, loaʻa iā mākou nā mea hana graphene hiki ke hoʻolōʻihi ʻia ma ka hoʻopili ʻana i nā ʻōwili graphene (~ 1 a 20 μm lōʻihi, ~ 0.1 a 1 μm ākea, a ~ 10 a 100 nm kiʻekiʻe) ma waena o nā papa graphene. Manaʻo mākou e hiki i kēia mau ʻōwili graphene ke hāʻawi i nā ala conductive e hoʻopaʻa i nā māwae i loko o nā pepa graphene, pēlā e mālama ai i ka conductivity kiʻekiʻe ma lalo o ke kaumaha. ʻAʻole pono nā ʻōwili graphene i ka synthesis a i ʻole kaʻina hana; ua hana maoli ia i ka wā o ke kaʻina hana hoʻoili pulu. Ma ka hoʻohana ʻana i nā ʻōwili multilayer G/G (graphene/graphene) (MGGs) graphene stretchable electrodes (puna/wai a me ka ʻīpuka) a me nā CNT semiconducting, ua hiki iā mākou ke hōʻike i nā transistors āpau-carbon nui loa a hiki ke hoʻolōʻihi ʻia, hiki ke kau ʻia i 120 % kānana (e like me ke kuhikuhi o ka lawe ʻana i ka uku) a mālama i 60 % o kā lākou huahana mua. ʻO kēia ka transistor e pili ana i ke kalapona ʻālohilohi loa i kēia manawa, a hāʻawi ia i ka manawa kūpono e hoʻokele i kahi LED inorganic.
No ka hoʻohana ʻana i nā electrodes graphene hiki ke hoʻopili ʻia ma kahi ākea nui, ua koho mākou i ka graphene ulu CVD ma Cu foil. Ua hoʻokuʻu ʻia ka Cu foil i waenakonu o kahi pahu quartz CVD e ʻae i ka ulu ʻana o ka graphene ma nā ʻaoʻao ʻelua, e hana ana i nā hale G / Cu / G. No ka hoʻoili ʻana i ka graphene, ua wili mua mākou i kahi ʻāpana lahilahi o ka poly(methyl methacrylate) (PMMA) no ka pale ʻana i kekahi ʻaoʻao o ka graphene, a mākou i kapa ai i ka topside graphene (ʻo ia hoʻi no ka ʻaoʻao o ka graphene), a ma hope iho, ka graphene. ʻO ke kiʻiʻoniʻoni holoʻokoʻa (PMMA/graphene kiʻekiʻe/Cu/graphene lalo) ua hoʻonā ʻia i loko o ka solution (NH4)2S2O8 e kāʻili i ka Cu foil. ʻO ka graphene ʻaoʻao lalo me ka uhi ʻole ʻana o ka PMMA e loaʻa nā māwae a me nā hemahema e hiki ai i kahi etchant ke komo i loko (36, 37). E like me ka mea i hōʻike ʻia ma ka Fig. 1A, ma lalo o ka hopena o ka ʻili o ka ʻili, ua ʻōwili ʻia nā kāʻei graphene i hoʻokuʻu ʻia i loko o nā ʻōwili a hoʻopili ʻia ma ke kiʻi ʻoniʻoni top-G/PMMA i koe. Hiki ke hoʻololi ʻia nā ʻōwili top-G/G i kekahi substrate, e like me SiO2/Si, aniani, a i ʻole polymer palupalu. ʻO ka hana hou ʻana i kēia kaʻina hoʻololi i nā manawa he nui ma ka substrate hoʻokahi e hāʻawi i nā hale MGG.
(A) Hōʻike kiʻi kiʻi o ke kaʻina hana no nā MGG ma ke ʻano he electrode stretchable. I ka wā o ka hoʻoili ʻana i ka graphene, ua haki ʻia ka graphene ʻaoʻao ma luna o Cu foil ma nā palena a me nā hemahema, ʻōwili ʻia i nā ʻano like ʻole, a hoʻopaʻa paʻa ʻia i nā kiʻiʻoniʻoni luna, e hana ana i nā nanoscrolls. Hōʻike ka pahu kiʻi ʻehā i ke ʻano MGG i hoʻopaʻa ʻia. (B a me C) Nā hiʻohiʻona TEM hoʻonā kiʻekiʻe o kahi MGG monolayer, e kālele ana i ka graphene monolayer (B) a me ka ʻāpana ʻōwili (C). ʻO ka hoʻokomo o (B) he kiʻi hoʻonui haʻahaʻa e hōʻike ana i ka morphology holoʻokoʻa o nā MGG monolayer ma ka pahu TEM. ʻO nā hoʻokomo o (C) nā ʻaoʻao ikaika i lawe ʻia ma nā pahu ʻehā i hōʻike ʻia ma ke kiʻi, kahi o ka mamao ma waena o nā mokulele atomika he 0.34 a me 0.41 nm. (D) Carbon K-edge EEL spectrum me ka graphitic hiʻona π* a me σ* piko i hōʻailona ʻia. (E) Kiʻi ʻāpana AFM o nā ʻōwili monolayer G/G me kahi kiʻekiʻe kiʻekiʻe ma ka laina kiko melemele. (F to I) Optical microscopy a me AFM kiʻi s o trilayer G me ka ʻole (F a me H) a me nā ʻōwili (G a me I) ma 300-nm-mānoanoa SiO2/Si substrates, pakahi. Ua hōʻailona ʻia nā ʻōwili a me nā wrinkles e hōʻike i ko lākou ʻokoʻa.
No ka hōʻoia ʻana ua ʻōwili ʻia nā ʻōwili i ka graphene ma ke ʻano, ua alakaʻi mākou i nā haʻawina spectroscopy electron electron (TEM) a me nā haʻawina spectroscopy ma luna o ka monolayer top-G/G scroll structures. Hōʻike ka Figure 1B i ke ʻano hexagonal o kahi graphene monolayer, a ʻo ka hoʻokomo ʻana he morphology holoʻokoʻa o ka kiʻiʻoniʻoni i uhi ʻia ma kahi lua kalapona o ka pahu TEM. ʻO ka graphene monolayer ka hapa nui o ka mākia, a ʻike ʻia kekahi mau graphene flakes i mua o nā pūʻulu hexagonal apo (Fig. 1B). Ma ka hoʻonui ʻana i kahi ʻōwili pākahi (Fig. 1C), ua ʻike mākou i ka nui o nā graphene lattice fringes, me ka lattice spacing ma waena o 0.34 a 0.41 nm. Hōʻike kēia mau ana i ka ʻōwili ʻia ʻana o nā flakes a ʻaʻole ia he graphite maikaʻi loa, nona ka lattice spacing o 0.34 nm ma ka papa "ABAB". Hōʻike ka Kiʻi 1D i ke kalapona K-edge EEL spectrum, kahi i puka mai ai ka piko ma 285 eV mai ka orbital π* a ʻo kekahi ma kahi o 290 eV ma muli o ka hoʻololi ʻana o ka orbital σ*. Hiki ke ʻike ʻia ka mana o ka hoʻopaʻa ʻana o sp2 ma kēia ʻano, e hōʻoia ana he kiʻi kiʻi kiʻi loa nā ʻōwili.
Hāʻawi nā kiʻi microscopy optical a me atomic force microscopy (AFM) i ka ʻike i ka hāʻawi ʻana i nā nanoscroll graphene i nā MGG (Fig. 1, E a G, a me nā fig. S1 a me S2). Hoʻokaʻawale ʻia nā ʻōwili ma luna o ka ʻili, a piʻi like ka nui o ko lākou in -plane i ka helu o nā papa i hoʻopaʻa ʻia. Hoʻopili ʻia nā ʻōwili he nui i loko o nā puʻupuʻu a hōʻike i nā kiʻekiʻe like ʻole ma ka laulā o 10 a 100 nm. ʻO 1 a 20 μm ka lōʻihi a me 0.1 a 1 μm ākea, e pili ana i ka nui o kā lākou graphene flakes mua. E like me ka mea i hōʻike ʻia ma ka Fig. 1 (H a me I), ʻoi aku ka nui o nā ʻōwili ma mua o nā wrinkles, e alakaʻi ana i kahi pilina ʻoi aku ka ʻoi aku ka nui ma waena o nā papa graphene.
No ke ana ʻana i nā waiwai uila, ua hoʻohālike mākou i nā kiʻiʻoniʻoni graphene me ka ʻole o nā hale ʻōwili a hoʻopaʻa ʻia i loko o nā ʻāpana 300-μm-ākea a me 2000-μm-lōʻihi me ka photolithography. Ua ana ʻia nā kūʻē kūʻē ʻelua-probe ma ke ʻano he hana o ke kānana ma lalo o nā kūlana ambient. ʻO ka loaʻa ʻana o nā ʻōwili i hōʻemi i ka resistivity no ka monolayer graphene e 80% me ka emi ʻana o 2.2% wale nō i ka transmittance (fig. S4). Hōʻoia kēia i nā nanoscrolls, he kiʻekiʻe ka nui o kēia manawa a hiki i ka 5 × 107 A / cm2 (38, 39), hana i kahi haʻawina uila maikaʻi loa i nā MGG. Ma waena o nā mono-, bi-, a me trilayer plain graphene a me MGGs, ʻo ka trilayer MGG ka mea maikaʻi loa o ka conductance me ka ʻike o ka aneane 90%. No ka hoʻohālikelike ʻana me nā kumu ʻē aʻe o ka graphene i hōʻike ʻia ma ka palapala, ua ana mākou i nā pale pale ʻehā-probe (fig. S5) a helu iā lākou ma ke ʻano he hana o ka transmittance ma 550 nm (fig. S6) ma Fig. 2A. Hōʻike ʻo MGG i ka hoʻohālikelike a ʻoi aku ka ʻoi aku o ka conductivity a me ka ʻike maopopo ma mua o ka graphene maʻemaʻe multila yer i hoʻopaʻa ʻia a hoʻemi ʻia ka graphene oxide (RGO) (6, 8, 18). E hoʻomanaʻo, ʻoi aku ka kiʻekiʻe o nā pale pale o ka graphene maʻemaʻe multilayer i hoʻopaʻa ʻia ma mua o kā mākou MGG, ma muli paha o ko lākou kūlana ulu ʻole a me ke ʻano hoʻololi.
(A) ʻEhā mau ʻāpana pepa kūʻē kūʻē i ka transmittance ma 550 nm no kekahi mau ʻano graphene, kahi e hōʻike ai nā ʻāpana ʻeleʻele i nā MGG mono-, bi-, a me trilayer; ʻO nā pōʻai ʻulaʻula a me nā huinakolu polū e pili ana me ka graphene ākea multilayer i ulu ma Cu a me Ni mai nā haʻawina o Li et al. (6) a me Kim et al. (8), kēlā me kēia, a hoʻoili ʻia ma ka SiO2/Si a i ʻole quartz; a ʻo nā triangles ʻōmaʻomaʻo nā waiwai no RGO ma nā pae hoʻohaʻahaʻa like ʻole mai ke aʻo ʻana o Bonaccorso et al. ( 18). (B a me C) Hoʻololi kūʻē maʻamau o mono-, bi- a trilayer MGGs a me G ma ke ʻano he hana o ke kānana perpendicular (B) a me ka parallel (C) i ke kuhikuhi o ke kahe o kēia manawa. (D) Hoʻololi kūpaʻa maʻamau o ka bilayer G (ʻulaʻula) a me ka MGG (ʻeleʻele) ma lalo o ka cyclic strain e hoʻouka ana i ka 50% perpendicular strain. (E) Hoʻololi kūpaʻa maʻamau o ka trilayer G (ʻulaʻula) a me ka MGG (ʻeleʻele) ma lalo o ka cyclic strain e hoʻouka ana a hiki i ka 90% parallel strain. (F) Hoʻololi capacitance maʻamau o mono-, bi- a me trilayer G a me bi- a me trilayer MGG ma ke ʻano he hana o ke kānana. ʻO ka inset ka capacitor structure, kahi o ka polymer substrate he SEBS a ʻo ka polymer dielectric layer ka SEBS 2-μm-mānoanoa.
No ka loiloi ʻana i ka hana i hilinaʻi ʻia o ka MGG, ua hoʻololi mākou i ka graphene ma luna o ka thermoplastic elastomer styrene-ethylene-butadiene-styrene (SEBS) substrates (~ 2 knm ākea a ~ 5 knm ka lōʻihi), a ua ana ʻia ka conductivity i ke kau ʻana o ka substrate. (e nānā i nā mea hana a me nā ʻano hana) i kū pololei a kūlike i ke kuhikuhi o ke kahe o kēia manawa (Fig. 2, B a me C). Ua hoʻomaikaʻi ʻia ke ʻano uila pili i ke koʻikoʻi me ka hoʻohui ʻana o nā nanoscrolls a me ka hoʻonui ʻana i ka helu o nā papa graphene. No ka laʻana, ke kū pololei ke kānana i ke kahe o kēia manawa, no ka graphene monolayer, ua hoʻonui ka hoʻohui ʻana o nā ʻōwili i ke koʻikoʻi i ka haki ʻana o ka uila mai 5 a 70%. Hoʻomaikaʻi maikaʻi ʻia ka hoʻomanawanui ʻana o ka trilayer graphene i hoʻohālikelike ʻia me ka graphene monolayer. Me nā nanoscrolls, ma ka 100% perpendicular strain, ua hoʻonui wale ʻia ke kū'ē o ka trilayer MGG structure e 50%, i ka hoʻohālikelike ʻana me 300% no ka trilayer graphene me ka ʻole o nā ʻōwili. Ua noiʻi ʻia ka hoʻololi kūʻē ʻana ma lalo o ka cyclic strain loading. No ka hoʻohālikelike (Fig. 2D), ua hoʻonui nā kū'ē o kahi kiʻi graphene bilayer maʻamau ma kahi o 7.5 mau manawa ma hope o ~700 cycles ma 50% perpendicular strain a hoʻomau i ka hoʻonui ʻana me ke koʻikoʻi i kēlā me kēia pōʻai. Ma ka ʻaoʻao ʻē aʻe, ua hoʻonui ʻia ke kūʻē o kahi bilayer MGG ma kahi o 2.5 mau manawa ma hope o ~700 cycles. Ke noi nei i ka 90% strain ma ke ala like, ua hoʻonui ʻia ke kū'ē o ka trilayer graphene ~ 100 mau manawa ma hope o 1000 cycles, ʻoiai he ~ 8 mau manawa i kahi trilayer MGG (Fig. 2E). Hōʻike ʻia nā hopena kaʻa kaʻa ma ka fig. S7. ʻOi aku ka wikiwiki o ka hoʻonui ʻana i ke kūʻē ʻana ma ka ʻaoʻao hoʻopaʻa like ʻana no ka mea, ʻo ke kuhikuhi ʻana o nā māwae e pili pono ana i ka ʻaoʻao o ke kahe o kēia manawa. ʻO ka hoʻokaʻawale ʻana o ke kūpaʻa i ka wā o ka hoʻouka ʻana a me ka wehe ʻana i ke kaumaha ma muli o ka viscoelastic recovery o SEBS elastomer substrate. ʻO ke kūpaʻa paʻa o nā ʻāpana MGG i ka wā kaʻa kaʻa ma muli o ka loaʻa ʻana o nā ʻōwili nui e hiki ke hoʻopaʻa i nā ʻāpana māwae o ka graphene (e like me ka nānā ʻana e AFM), e kōkua ana i ka mālama ʻana i kahi ala percolating. Ua hōʻike mua ʻia kēia ʻano o ka mālama ʻana i ka conductivity ma ke ala percolating no nā metala māwae a i ʻole nā ​​kiʻi semiconductor ma luna o nā substrates elastomer (40, 41).
No ka loiloi ʻana i kēia mau kiʻi ʻoniʻoni graphene e like me nā electrodes puka ma nā mea hiki ke hoʻopaʻa ʻia, ua uhi mākou i ka papa graphene me kahi papa dielectric SEBS (2 μm mānoanoa) a nānā i ka hoʻololi capacitance dielectric ma ke ʻano he hana o ke kānana (e ʻike i ka Fig. 2F a me nā mea hoʻohui. kikoʻī). Ua ʻike mākou ua emi koke nā capacitances me ka monolayer a me ka bilayer graphene electrodes ma muli o ka nalowale o ka conductivity in-plane o graphene. Ma ka hoʻohālikelike ʻana, ua hōʻike ʻia nā capacitances gated e MGGs a me ka plain trilayer graphene i ka piʻi ʻana o ka capacitance me ka strain, i manaʻo ʻia ma muli o ka hōʻemi ʻana i ka mānoanoa dielectric me ke kānana. ʻO ka hoʻonui i manaʻo ʻia o ka capacitance i kūpono loa me ka hoʻolālā MGG (fig. S8). Hōʻike kēia he kūpono ʻo MGG ma ke ʻano he electrode puka no nā transistors hiki ke hoʻolōʻihi.
No ka noiʻi hou ʻana i ke kuleana o ka graphene scroll 1D i ka hoʻomanawanui ʻana o ka conductivity uila a ʻoi aku ka maikaʻi o ka mālama ʻana i ka kaʻawale ʻana ma waena o nā papa graphene, ua hoʻohana mākou i nā CNT i uhi ʻia e pani i nā ʻōwili graphene (e nānā i nā Mea Hoʻohui). No ka hoʻohālikelike ʻana i nā hale MGG, waiho mākou i ʻekolu density o CNTs (ʻo ia hoʻi, CNT1
(A i C) nā kiʻi AFM o ʻekolu mau ʻano like ʻole o CNTs (CNT1
No ka hoʻomaopopo hou ʻana i ko lākou hiki ke like me nā electrodes no nā uila uila, ua noiʻi ʻōnaehana mākou i nā morphologies o MGG a me G-CNT-G ma lalo o ke kaumaha. ʻAʻole maikaʻi ke ʻano o ka microscopy optical a me ka scanning electron microscopy (SEM) no ka mea ʻaʻole i loaʻa ka ʻokoʻa o ka waihoʻoluʻu a me ka SEM i lalo i nā kiʻi kiʻi i ka wā e hoʻopaʻa ʻia ai ka graphene ma nā substrate polymer (fig. S9 a me S10). No ka nānā ʻana i ka ʻili o ka graphene ma lalo o ke koʻikoʻi, ua hōʻiliʻili mākou i nā ana AFM ma nā MGG trilayer a me ka graphene maʻamau ma hope o ka hoʻololi ʻana i nā substrate SEBS lahilahi loa (~ 0.1 mm mānoanoa). Ma muli o nā hemahema i loko o ka graphene CVD a me ka pōʻino o waho i ka wā o ka hoʻoili ʻana, hiki ke hana ʻia nā māwae ma luna o ka graphene i hoʻopaʻa ʻia, a me ka hoʻonui nui ʻana, ua ʻoi aku ka paʻakikī o nā māwae (Fig. 4, A i D). Ma muli o ka hoʻopaʻa ʻana o nā electrodes ma muli o ke kalapona, hōʻike nā māwae i nā morphologies like ʻole (fig. S11) (27). ʻOi aku ka liʻiliʻi o ka ʻāpana māwae (i wehewehe ʻia ʻo ka ʻāpana māwae/wahi i nānā ʻia) o ka graphene multilayer ma mua o ka graphene monolayer ma hope o ke kānana, i kūlike me ka piʻi ʻana o ka conductivity uila no nā MGG. Ma ka ʻaoʻao ʻē aʻe, ʻike pinepine ʻia nā ʻōwili e hoʻopili i nā māwae, e hāʻawi ana i nā ala conductive hou i ke kiʻi ʻoniʻoni. No ka laʻana, e like me ka lepili ma ke kiʻi o Fig. 4B, ua hele kekahi ʻōwili ākea ma luna o kahi māwae i loko o ka trilayer MGG, akā ʻaʻohe ʻōwili i ʻike ʻia ma ka graphene maʻamau (Fig. 4, E a i H). Pēlā nō, hoʻopili pū nā CNT i nā māwae i ka graphene (fig. S11). Ua hōʻuluʻulu ʻia ka mānoanoa o ka māwae, ka ʻāpana ʻōwili, a me ka ʻawaʻawa o nā kiʻiʻoniʻoni ma Fig. 4K.
(A i H) Ma kahi kiʻi AFM o nā ʻōwili trilayer G/G (A a i D) a me nā hale trilayer G (E i H) ma kahi SEBS lahilahi loa (~0.1 mm mānoanoa) elastomer ma 0, 20, 60, a me 100 % kaohi. Kuhi ʻia nā māwae a me nā ʻōwili me nā pua. Aia nā kiʻi AFM a pau ma kahi o 15 μm × 15 μm, me ka hoʻohana ʻana i ka pā kala kala like me ka lepili. (I) ʻO ka hoʻohālikelike ʻana o nā electrodes graphene monolayer ma ka substrate SEBS. (J) Ka palapala 'āina hoʻohālike o ke kumu logarithmic koʻikoʻi loa i loko o ka monolayer graphene a me ka SEBS substrate ma 20% o waho. (K) Ka hoʻohālikelike ʻana o ka mānoanoa wahi māwae (ke kolamu ʻulaʻula), ka nui o ka ʻāpana ʻōwili (ke kolamu melemele), a me ka ʻinoʻino o ka ʻili (ke kolamu uliuli) no nā hale graphene like ʻole.
Ke hohola ʻia nā kiʻi ʻoniʻoni MGG, aia kekahi ʻano hana hou e hiki ai i nā ʻōwili ke hoʻopaʻa i nā ʻāpana o ka graphene, e mālama ana i kahi pūnaewele percolating. He ʻoiaʻiʻo ka graphene scrolls no ka mea hiki iā lākou ke ʻumi micrometers ka lōʻihi a no laila hiki iā lākou ke hoʻopaʻa i nā māwae maʻamau a hiki i ka unahi micrometer. Eia kekahi, no ka mea aia nā ʻōwili i nā multilayers o ka graphene, ua manaʻo ʻia he haʻahaʻa haʻahaʻa. I ka hoʻohālikelike ʻana, koi ʻia nā ʻupena CNT e hāʻawi i ka hiki ke hoʻohālikelike conductive bridging, ʻoiai ʻoi aku ka liʻiliʻi o nā CNT (maʻamau he mau micrometers ka lōʻihi) a ʻoi aku ka liʻiliʻi o ka conductive ma mua o nā ʻōwili. Ma kekahi ʻaoʻao, e like me ka hōʻike ʻana ma ka fig. S12, ʻoiai ua māhā ka graphene i ka wā e hoʻolōʻihi ai e hoʻokipa i ke kaumaha, ʻaʻole nahā nā ʻōwili, e hōʻike ana e paheʻe ana ka hope ma ka graphene lalo. ʻO ke kumu o ka haki ʻole ʻia ma muli paha o ke ʻano o ka ʻōwili ʻia, i haku ʻia me nā papa he nui o ka graphene (~ 1 a 2 0 μm lōʻihi, ~ 0.1 a 1 μm ākea, a ~ 10 a 100 nm kiʻekiʻe). he modulus ʻoi aku ka maikaʻi ma mua o ka graphene papa hoʻokahi. E like me ka hōʻike ʻana e Green a me Hersam (42), hiki i nā ʻupena CNT metala (ke anawaena paipu o 1.0 nm) ke hoʻokō i nā pale haʻahaʻa haʻahaʻa <100 ohms/sq ʻoiai ke kūʻē nui ʻana ma waena o nā CNT. I ka noʻonoʻo ʻana he 0.1 a 1 μm ka laulā o kā mākou scroll graphene a ʻoi aku ka nui o nā wahi hulina G / G ma mua o nā CNTs, ʻaʻole pono ka hoʻopili ʻana i ke kūpaʻa a me ka wahi pili ma waena o nā graphene a me nā ʻōwili graphene e kaupalena i nā mea e mālama ai i ka conductivity kiʻekiʻe.
ʻOi aku ka nui o ka modulus o ka graphene ma mua o ka SEBS substrate. ʻOiai ʻoi aku ka haʻahaʻa o ka mānoanoa kūpono o ka electrode graphene ma mua o ka substrate, ua hoʻohālikelike ʻia ka ʻoʻoleʻa o ka manawa graphene i kona mānoanoa me ko ka substrate (43, 44), ka hopena i ka hopena o ka mokupuni ʻoʻoleʻa. Hoʻohālikelike mākou i ka deformation o kahi graphene 1-nm-mānoanoa ma kahi substrate SEBS (e ʻike i nā Mea Hoʻohui no nā kikoʻī). Wahi a nā hopena hoʻohālikelike, ke hoʻohana ʻia ka 20% strain i ka SEBS substrate ma waho, ʻo ka awelika o ka graphene he ~ 6.6% (Fig. 4J and fig. S13D), i kūlike me nā ʻike hoʻokolohua (e nānā i ka fig. S13). . Ua hoʻohālikelike mākou i ke koʻikoʻi i loko o ka graphene a me nā ʻāpana substrate me ka hoʻohana ʻana i ka microscopy optical a ʻike ʻia ke koʻikoʻi ma ka ʻāpana substrate ʻoi aku ka liʻiliʻi ʻelua o ke kānana ma ka ʻāina graphene. Hōʻike kēia i hiki ke hoʻopaʻa ʻia ke koʻikoʻi i hoʻopili ʻia ma nā ʻōnaehana electrode graphene, e hana ana i nā mokupuni ʻoʻoleʻa graphene ma luna o SEBS (26, 43, 44).
No laila, ʻo ka hiki o nā electrodes MGG ke mālama i ka conductivity kiʻekiʻe ma lalo o ke koʻikoʻi kiʻekiʻe e hiki ke hoʻohana ʻia e ʻelua mau mīkini nui: (i) Hiki i nā ʻōwili ke hoʻopaʻa i nā ʻāpana i hoʻokaʻawale ʻia e mālama i kahi ala percolation conductive, a (ii) hiki i ka multilayer graphene sheets/elastomer ke paheʻe. ma luna o kekahi i kekahi, e hoʻemi ana i ke koʻikoʻi ma nā electrodes graphene. No nā papa he nui o ka graphene i hoʻoili ʻia ma luna o ka elastomer, ʻaʻole i hoʻopili ikaika ʻia nā papa i kekahi i kekahi, hiki ke paheʻe i ka pane ʻana i ke koʻikoʻi (27). Ua hoʻonui pū nā ʻōwili i ke ʻano o nā papa graphene, hiki ke kōkua i ka hoʻonui ʻana i ka hoʻokaʻawale ʻana ma waena o nā papa graphene a no laila hiki ke hoʻoheheʻe ʻia nā papa graphene.
Hoʻoikaika ʻia nā mea hana kalapona āpau ma muli o ke kumu kūʻai haʻahaʻa a me ka hana kiʻekiʻe. I kā mākou hihia, ua hana ʻia nā transistors kalapona āpau me ka ʻīpuka graphene lalo, kahi kumu graphene kiʻekiʻe / hoʻopili wai, kahi semiconductor CNT i koho ʻia, a me SEBS ma ke ʻano he dielectric (Fig. 5A). E like me ka mea i hōʻike ʻia ma ka Fig. 5B, ʻoi aku ka opaque o kahi mea kalapona āpau me nā CNT ma ke ʻano he kumu/wai a me ka puka (mea lalo) ʻoi aku ka opaque ma mua o ka mea me nā electrodes graphene (mea luna). ʻO kēia no ka mea e koi ana nā ʻupena CNT i nā mānoanoa nui aʻe, a no laila, nā transmittances opua haʻahaʻa no ka loaʻa ʻana o nā pale pale e like me ka graphene (fig. S4). Hōʻike ka Kiʻi 5 (C a me D) i ka hoʻololi ʻana a me nā pihi puka ma mua o ke kānana no kahi transistor i hana ʻia me nā electrodes MGG bilayer. ʻO ka laulā a me ka lōʻihi o ka transistor unstrained he 800 a me 100 μm. ʻOi aku ka nui o ka lākiō on/off i ana ʻia ma mua o 103 me nā au a me nā ʻauwaha ma nā pae o 10−5 a me 10−8 A. Hōʻike ka pihi puka i nā regime linear a me ka sa turration kūpono me ka hilinaʻi o ka puka-voltage, e hōʻike ana i ka pilina kūpono ma waena o nā CNT a me nā electrodes graphene (45). Ua ʻike ʻia ka haʻahaʻa o ka hoʻopili ʻana me nā electrodes graphene ma mua o kēlā me ke kiʻi ʻoniʻoni Au i hoʻoheheʻe ʻia (e nānā i ka fig. S14). ʻO ka mobility saturation o ka transistor stretchable ma kahi o 5.6 cm2/Vs, e like me ka like me ka polymer-sorted CNT transistors ma luna o nā pani paʻa Si me 300-nm SiO2 ma ke ʻano he papa dielectric. Hiki ke hoʻomaikaʻi hou aʻe i ka neʻe ʻana me ka nui o ka paipu i hoʻopaʻa ʻia a me nā ʻano paipu ʻē aʻe (46).
(A) Papahana o ka transistor stretchable ma muli o ka graphene. Nā SWNT, nā nanotubes kalapona pā hoʻokahi. (B) Kiʻi o nā transistors stretchable i hana ʻia me nā electrodes graphene (luna) a me nā electrodes CNT (lalo). ʻIke maopopo ʻia ka ʻokoʻa o ka ʻike. (C a me D) Hoʻololi a me nā pihi puka o ka transistor ma muli o ka graphene ma SEBS ma mua o ke kānana. (E a me F) Hoʻololi i nā ʻōpuni, a me waho o kēia manawa, ratio on/off, a me ka neʻe ʻana o ka transistor ma muli o ka graphene ma nā ʻano ʻokoʻa.
I ka wā i hohola ʻia ai ka mea akaka, nā kalapona āpau i ka ʻaoʻao e like me ke kuhikuhi o ka lawe ʻana, ua ʻike ʻia ka liʻiliʻi o ka hoʻohaʻahaʻa ʻana a hiki i ka 120% strain. I ka wā o ka hoʻolōʻihi ʻana, ua emi mau ka neʻe ʻana mai 5.6 cm2/Vs ma 0% strain i 2.5 cm2/ Vs ma 120% strain (Fig. 5F). Ua hoʻohālikelike mākou i ka hana transistor no nā lōʻihi o ke kahawai ʻokoʻa (e ʻike i ka papa S1). ʻO ka mea nui, ma kahi koʻikoʻi e like me 105%, ua hōʻike mau kēia mau transistors āpau i kahi ratio kiʻekiʻe on / off (>103) a me ka neʻe (> 3 cm2 / Vs). Eia hou, ua hōʻuluʻulu mākou i nā hana hou a pau ma nā transistors kalapona āpau (e nānā i ka papa S2) (47–52). Ma ka hoʻonui ʻana i ka hana ʻana o nā mea hana ma luna o nā elastomers a me ka hoʻohana ʻana i nā MGG ma ke ʻano he hoʻopili, hōʻike kā mākou transistors-carbon holoʻokoʻa i ka hana maikaʻi ma ke ʻano o ka neʻe ʻana a me ka hysteresis a me ka hikiwawe loa.
Ma ke ʻano he noi o ka transistor akaka a hiki ke hoʻohana ʻia, ua hoʻohana mākou ia mea e hoʻomalu i ka hoʻololi ʻana o kahi LED (Fig. 6A). E like me ka mea i hōʻike ʻia ma ka Fig. 6B, hiki ke ʻike maopopo ʻia ke kukui ʻōmaʻomaʻo ma o ka mīkini kalapona āpau i kau ʻia ma luna pono. ʻOiai e hoʻolōʻihi ana i ~ 100% (Fig. 6, C a me D), ʻaʻole e loli ka ikaika o ke kukui LED, e kūlike me ka hana transistor i hōʻike ʻia ma luna (e nānā i ke kiʻiʻoniʻoni S1). ʻO kēia ka hōʻike mua o nā ʻāpana mana stretchable i hana ʻia me ka hoʻohana ʻana i nā electrodes graphene, e hōʻike ana i kahi hiki hou no ka graphene stretchable electronics.
(A) Kaapuni o kahi transistor e hoʻokele LED. GND, lepo. (B) ʻO ke kiʻi o ka transistor carbon all-carbon hiki ke hoʻopololei ʻia ma ka 0% i kau ʻia ma luna o ke kukui ʻōmaʻomaʻo. (C) Ke kau ʻia nei ka transistor transparent a stretchable i hoʻohana ʻia e hoʻololi i ke LED ma luna o ke LED ma 0% (hema) a me ~100% strain (akau). Kuhi ʻia nā pua keʻokeʻo ma ke ʻano o nā māka melemele ma ka hāmeʻa e hōʻike i ka hoʻololi ʻana o ka mamao. (D) ʻO ka ʻaoʻao ʻaoʻao o ka transistor i hoʻolōʻihi ʻia, me ka LED i hoʻokuʻu ʻia i loko o ka elastomer.
I ka hopena, ua hoʻomohala mākou i kahi hanana graphene conductive māmā e mālama i ka conductivity kiʻekiʻe ma lalo o nā kaha nui e like me nā electrodes stretchable, hiki i nā graphene nanoscrolls ma waena o nā papa graphene i hoʻopaʻa ʻia. Hiki i kēia mau hana electrode MGG bi- a me trilayer ma kahi elastomer ke mālama i ka 21 a me 65%, kēlā me kēia, o kā lākou 0% strain conductivities ma kahi kānana i kiʻekiʻe e like me 100%, i hoʻohālikelike ʻia me ka pau ʻana o ka conductivity ma 5% kānana no nā electrodes graphene monolayer maʻamau. . ʻO nā ala conductive ʻē aʻe o nā ʻōwili graphene a me ka pilina nāwaliwali ma waena o nā papa i hoʻololi ʻia e kōkua i ka paʻa conductivity maikaʻi ma lalo o ke kaumaha. Hoʻohana hou mākou i kēia ʻano hana graphene e hana i nā transistors hiki ke hoʻolōʻihi ʻia. I kēia manawa, ʻo kēia ka transistor e pili ana i ka graphene me ka ʻoi aku ka maikaʻi me ka ʻole o ka hoʻohana ʻana i ka buckling. ʻOiai ua hana ʻia ka haʻawina i kēia manawa e hiki ai i ka graphene no nā mea uila hiki ke hoʻolōʻihi ʻia, ke manaʻoʻiʻo nei mākou hiki ke hoʻonui ʻia kēia ala i nā mea 2D ʻē aʻe e hiki ai i ka uila uila 2D stretchable.
Ua ulu ʻia ka graphene CVD nui ma luna o nā pahu Cu i hoʻokuʻu ʻia (99.999%; Alfa Aesar) ma lalo o ke kaomi mau o 0.5 mtorr me 50-SCCM (kenimika cubic maʻamau i kēlā me kēia minuke) CH4 a me 20-SCCM H2 ma ke ʻano he precursors ma 1000°C. Ua uhi ʻia nā ʻaoʻao ʻelua o ka Cu foil e ka monolayer graphene. Ua wili ʻia kahi ʻāpana lahilahi o PMMA (2000 rpm; A4, Microchem) ma kekahi ʻaoʻao o ka pahu Cu, e hana ana i kahi hoʻolālā PMMA/G/Cu foil/G. a laila, hoʻonā ʻia ke kiʻiʻoniʻoni holoʻokoʻa i loko o ka 0.1 M ammonium persulfate solution [(NH4)2S2O8] no kahi 2 mau hola e hoʻopau ai i ka Cu foil. I loko o kēia kaʻina hana, ua haehae mua ka graphene ʻaoʻao hope ʻole ma nā palena o ka palaoa a laila ʻōwili ʻia i loko o nā ʻōwili ma muli o ke ʻano o ka ʻili. Hoʻopili ʻia nā ʻōwili ma luna o ke kiʻi graphene luna i kākoʻo ʻia e PMMA, e hana ana i nā ʻōwili PMMA/G/G. Holoi ʻia nā kiʻiʻoniʻoni i loko o ka wai deionized i nā manawa he nui a kau ʻia ma luna o kahi substrate i hoʻopaʻa ʻia, e like me ka SiO2/Si paʻa a i ʻole ka substrate plastic. Ma hope o ka maloʻo ʻana o ke kiʻiʻoniʻoni i hoʻopili ʻia ma luna o ka substrate, ua hoʻomoʻi ʻia ka hāpana i ka acetone, 1:1 acetone/IPA (isopropyl alcohol), a me IPA no 30 mau kekona e wehe i ka PMMA. Hoʻomaʻamaʻa ʻia nā kiʻiʻoniʻoni ma 100 ° C no 15 min a i ʻole mālama ʻia i loko o kahi ʻūlū i ka pō e hoʻopau loa i ka wai i hoʻopaʻa ʻia ma mua o ka hoʻoili ʻia ʻana o kahi papa o G / G scroll ma luna. ʻO kēia kaʻina hana e pale aku i ka wehe ʻana o ke kiʻi graphene mai ka substrate a hōʻoia i ka uhi piha ʻana o nā MGG i ka wā e hoʻokuʻu ʻia ai ka papa lawe lawe PMMA.
Ua ʻike ʻia ka morphology o ka hale MGG me ka microscope optical (Leica) a me kahi microscope electron scanning (1 kV; FEI). Ua hoʻohana ʻia kahi microscope ikaika atomic (Nanoscope III, Digital Instrument) ma ke ʻano paʻi e nānā i nā kikoʻī o nā ʻōwili G. Ua hoʻāʻo ʻia ka ʻike kiʻiʻoniʻoni e kahi spectrometer ʻike ultraviolet (Agilent Cary 6000i). No nā hoʻāʻo ʻana i ka wā e hele ai ke kānana ma ke ala pololei o ke kahe o kēia manawa, ua hoʻohana ʻia ka photolithography a me ka plasma O2 e hoʻohālike i nā hale graphene i loko o nā ʻāpana (~ 300 μm ākea a ~ 2000 μm lōʻihi), a ua waiho ʻia nā electrodes Au (50 nm) me ka thermally me ka hoʻohana ʻana. pale aka ma na welau elua o ka aoao loihi. Hoʻopili ʻia nā ʻāpana graphene me kahi elastomer SEBS (~ 2 knm ka laula a ~ 5 knm ka lōʻihi), me ke koʻi lōʻihi o nā ʻāpana e pili ana i ka ʻaoʻao pōkole o SEBS a ukali ʻia e BOE (buffered oxide etch) (HF:H2O. 1:6) etching a me eutectic gallium indium (EGaIn) ma ke ʻano he mea hoʻopili uila. No nā hoʻāʻo ʻana like, ua hoʻoili ʻia nā graphene structur es (~ 5 × 10 mm) ma luna o nā pani SEBS, me nā koʻi lōʻihi e like me ka ʻaoʻao lōʻihi o ka substrate SEBS. No nā hihia ʻelua, ʻo ka G holoʻokoʻa (me ka ʻole o G scrolls) / SEBS ua hohola ʻia ma ka ʻaoʻao lōʻihi o ka elastomer i loko o kahi hāmeʻa manual, a ma kahi, ua ana mākou i kā lākou hoʻololi kūʻē ʻana ma lalo o ke koʻikoʻi ma kahi kahua hoʻokolohua me kahi mea nānā semiconductor (Keithley 4200). -SCS).
Ua hana ʻia nā transistors kalapona holoʻokoʻa hiki ke hoʻopololei a ʻalohilohi ma luna o kahi substrate elastic e nā kaʻina hana e pale aku ai i ka pōʻino o ka solvent organik o ka polymer dielectric a me ka substrate. Ua hoʻoili ʻia nā hana MGG ma SEBS ma ke ʻano he electrodes puka. No ka loaʻa ʻana o kahi ʻāpana polimer dielectric lahilahi (2 μm mānoanoa), ua wili ʻia kahi hopena SEBS toluene (80 mg/ml) ma kahi octadecyltrichlorosilane (OTS) - hoʻololi ʻia ʻo SiO2/Si substrate ma 1000 rpm no 1 min. Hiki ke hoʻololi maʻalahi ke kiʻi ʻoniʻoni dielectric mai ka ʻili OTS hydrophobic ma luna o ka substrate SEBS i uhi ʻia me ka graphene i hoʻomākaukau ʻia. Hiki ke hana ʻia kahi capacitor ma ka waiho ʻana i kahi wai-metala (EGaIn; Sigma-Aldrich) kiʻekiʻe electrode e hoʻoholo ai i ka capacitance ma ke ʻano he hana o ke kānana me ka LCR (inductance, capacitance, resistance) mika (Agilent). ʻO ka ʻāpana ʻē aʻe o ka transistor he mau CNT semiconducting polymer-sorted, ma muli o nā kaʻina hana i hōʻike mua ʻia (53). Ua hana ʻia ke kumu kumu/drain electrod e ma luna o nā substrate SiO2/Si paʻa. Ma hope iho, ua laminated nā ʻāpana ʻelua, dielectric / G / SEBS a me CNTs / patterned G / SiO2 / Si, i kekahi i kekahi, a hoʻomoʻi ʻia i ka BOE e wehe i ka substrate SiO2 / Si paʻa. No laila, ua hana ʻia nā transistors akaka loa a hiki ke hoʻopaʻa ʻia. Ua hana ʻia ka hoʻāʻo uila ma lalo o ke koʻikoʻi ma kahi hoʻonohonoho kikoʻī lima e like me ke ʻano i ʻōlelo ʻia ma luna.
Loaʻa nā mea hoʻohui no kēia ʻatikala ma http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
fig. S1. ʻO nā kiʻi microscopy optical o monolayer MGG ma nā substrate SiO2/Si ma nā hoʻonui like ʻole.
fig. S4. Ka hoʻohālikelike ʻana i nā ʻāpana pale ʻelua a me nā transmittances @550 nm o mono-, bi- a me trilayer plain graphene (nā ʻāpana ʻeleʻele), MGG (nā pōʻai ʻulaʻula), a me nā CNT (huiakolu uliuli).
fig. S7. Hoʻololi kūʻē maʻamau o nā MGG mono- a me bilayer (ʻeleʻele) a me G (ʻulaʻula) ma lalo o ~1000 cyclic strain e hoʻouka ana i 40 a me 90% parallel strain, kēlā me kēia.
fig. S10. Kiʻi SEM o ka MGG trilayer ma SEBS elastomer ma hope o ke kānana, e hōʻike ana i kahi keʻa ʻōwili lōʻihi ma luna o kekahi mau māwae.
fig. S12. ʻO ke kiʻi AFM o trilayer MGG ma ka SEBS elastomer lahilahi ma 20% kānana, e hōʻike ana ua hele ka ʻōwili ma luna o kahi māwae.
papa S1. Ka neʻe ʻana o ka bilayer MGG–hoʻokahi-paʻa kalapona nanotube transistors ma nā ʻanuʻu lōʻihi like ʻole ma mua a ma hope o ke kānana.
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Na Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
Na Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
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