Nā electrodes graphene ultratransparent a hiki ke hoʻolōʻihi ʻia

He mea hoihoi nā mea ʻelua-dimensional, e like me ka graphene, no nā noi semiconductor maʻamau a me nā noi hou i nā mea uila maʻalahi. Eia nō naʻe, ʻo ka ikaika tensile kiʻekiʻe o ka graphene e hopena i ka haki ʻana ma ke kaumaha haʻahaʻa, e paʻakikī ai ke hoʻohana i kona mau waiwai uila kupaianaha i nā mea uila hiki ke hoʻolōʻihi ʻia. I mea e hiki ai i ka hana maikaʻi loa o nā alakaʻi graphene aniani, ua hana mākou i nā nanoscrolls graphene ma waena o nā papa graphene i hoʻopaʻa ʻia, i kapa ʻia ʻo nā ʻōwili graphene/graphene multilayer (MGGs). Ma lalo o ke kaumaha, ua hoʻopili kekahi mau ʻōwili i nā ʻāpana ʻāpana o ka graphene e mālama i kahi pūnaewele percolating i hiki ai ke conductivity maikaʻi loa i nā kaumaha kiʻekiʻe. Ua mālama nā MGG Trilayer i kākoʻo ʻia ma nā elastomers i 65% o kā lākou conductance mua ma 100% strain, kahi e kū pono ana i ke kuhikuhi o ke kahe o kēia manawa, ʻoiai ʻo nā kiʻiʻoniʻoni trilayer o graphene me ka ʻole o nā nanoscrolls i mālama wale i 25% o kā lākou conductance hoʻomaka. Ua hōʻike ʻia kahi transistor kalapona āpau hiki ke hoʻolōʻihi ʻia me ka hoʻohana ʻana i nā MGG ma ke ʻano he electrodes i kahi transmittance o >90% a mālama i 60% o kāna output au mua ma 120% strain (e like me ke kuhikuhi o ka lawe ʻana i ka uku). Hiki i kēia mau transistors kalapona āpau hiki ke hoʻolōʻihi ʻia a moakāka hoʻi ke hiki i nā optoelectronics hiki ke hoʻolōʻihi ʻia.
ʻO nā mea uila aniani hiki ke hoʻolōʻihi ʻia kahi kahua e ulu nei me nā noi koʻikoʻi i nā ʻōnaehana biointegrated holomua (1, 2) a me ka hiki ke hoʻohui pū me nā optoelectronics hiki ke hoʻolōʻihi ʻia (3, 4) e hana i nā robotics palupalu a me nā hōʻikeʻike. Hōʻike ʻo Graphene i nā waiwai makemake nui ʻia o ka mānoanoa atomika, ke aniani kiʻekiʻe, a me ke alakaʻi kiʻekiʻe, akā ua kāohi ʻia kona hoʻokō ʻana i nā noi hiki ke hoʻolōʻihi ʻia e kona ʻano e haki i nā ʻano liʻiliʻi. ʻO ka lanakila ʻana i nā palena mechanical o graphene hiki ke hiki i ka hana hou i nā mea aniani hiki ke hoʻolōʻihi ʻia.
ʻO nā waiwai kūikawā o ka graphene e lilo ia i moho ikaika no ka hanauna hou o nā electrodes conductive transparent (5, 6). Ke hoʻohālikelike ʻia me ke alakaʻi transparent i hoʻohana pinepine ʻia, indium tin oxide [ITO; 100 ohms/square (sq) ma 90% transparency], ʻo ka monolayer graphene i ulu ʻia e ka chemical vapor deposition (CVD) he hui like o ke kūpaʻa pepa (125 ohms/sq) a me ka transparency (97.4%) (5). Eia kekahi, he ʻokoʻa loa ka maʻalahi o nā kiʻiʻoniʻoni graphene i hoʻohālikelike ʻia me ITO (7). No ka laʻana, ma kahi substrate plastic, hiki ke mālama ʻia kona conductance no ka radius bending o ka curvature e like me 0.8 mm (8). No ka hoʻonui hou aku i kāna hana uila ma ke ʻano he alakaʻi flexible transparent, ua hoʻomohala nā hana mua i nā mea hybrid graphene me nā nanowires kālā hoʻokahi-dimensional (1D) a i ʻole nā ​​​​nanotubes carbon (CNTs) (9-11). Eia kekahi, ua hoʻohana ʻia ka graphene ma ke ʻano he electrodes no nā semiconductors heterostructural dimensional i hui pū ʻia (e like me 2D bulk Si, 1D nanowires/nanotubes, a me 0D quantum dots) (12), nā transistors flexible, nā cell solar, a me nā diodes light-emitting (LEDs) (13-23).
ʻOiai ua hōʻike ʻo graphene i nā hopena hoʻohiki no nā mea uila maʻalahi, ua kaupalena ʻia kāna noi ʻana i nā mea uila hiki ke hoʻolōʻihi ʻia e kona mau waiwai mechanical (17, 24, 25); he 340 N/m ka paʻakikī o ka graphene i loko o ka mokulele a he 0.5 TPa ka modulus Young (26). ʻAʻole hāʻawi ka pūnaewele kalapona-kalapona ikaika i kekahi mau ʻano hana hoʻoheheʻe ikehu no ke kaumaha i hoʻopili ʻia a no laila e haki koke ana ma lalo o 5% ke kaumaha. No ka laʻana, hiki i ka graphene CVD i hoʻoili ʻia ma luna o kahi substrate elastic polydimethylsiloxane (PDMS) ke mālama i kona conductivity ma lalo o 6% ke kaumaha (8). Hōʻike nā helu kumumanaʻo e hōʻemi nui ka crumpling a me ka interplay ma waena o nā papa like ʻole i ka paʻakikī (26). Ma ka hoʻopaʻa ʻana i ka graphene i loko o nā papa he nui, ua hōʻike ʻia he hiki ke hoʻolōʻihi ʻia kēia graphene bi- a i ʻole trilayer i 30% ke kaumaha, e hōʻike ana i ka loli kū'ē he 13 mau manawa liʻiliʻi ma mua o ka monolayer graphene (27). Eia nō naʻe, ʻoi aku ka haʻahaʻa o kēia hiki ke hoʻolōʻihi ʻia ma mua o nā mea hoʻolōʻihi hiki ke hoʻolōʻihi ʻia o kēia au (28, 29).
He mea nui nā transistors i nā noi hiki ke hoʻolōʻihi ʻia no ka mea hiki iā lākou ke hoʻohana i ka heluhelu ʻana o ka sensor a me ka nānā ʻana i ka hōʻailona (30, 31). Hiki i nā transistors ma PDMS me ka graphene multilayer ma ke ʻano he electrodes kumu/hoʻokahe a me nā mea kahawai ke mālama i ka hana uila a hiki i ka 5% strain (32), ʻoi aku ka haʻahaʻa ma mua o ka waiwai i koi ʻia (~50%) no nā sensor nānā olakino hiki ke hoʻohana ʻia a me ka ʻili uila (33, 34). I kēia manawa, ua ʻimi ʻia kahi ala kirigami graphene, a hiki ke hoʻolōʻihi ʻia ka transistor i hoʻopaʻa ʻia e kahi electrolyte wai a hiki i ka 240% (35). Eia nō naʻe, pono kēia ʻano hana i ka graphene i hoʻokuʻu ʻia, kahi e hoʻopilikia ai i ke kaʻina hana.
Maanei, hoʻokō mākou i nā mea hana graphene hiki ke hoʻolōʻihi ʻia ma o ka hoʻokomo ʻana i nā ʻōwili graphene (~1 a 20 μm ka lōʻihi, ~0.1 a 1 μm ka laulā, a me ~10 a 100 nm ke kiʻekiʻe) ma waena o nā papa graphene. Ke kuhi nei mākou e hiki i kēia mau ʻōwili graphene ke hāʻawi i nā ala alakaʻi e hoʻopili i nā māwae i loko o nā pepa graphene, no laila e mālama ana i ka conductivity kiʻekiʻe ma lalo o ke kaumaha. ʻAʻole pono nā ʻōwili graphene i ka synthesis a i ʻole ke kaʻina hana hou; ua hana maoli ʻia lākou i ka wā o ke kaʻina hana hoʻoili pulu. Ma ka hoʻohana ʻana i nā ʻōwili multilayer G/G (graphene/graphene) (MGGs) nā electrodes graphene stretchable (source/drain and gate) a me nā semiconducting CNTs, ua hiki iā mākou ke hōʻike i nā transistors all-carbon maopopo loa a hiki ke hoʻolōʻihi ʻia, hiki ke hoʻolōʻihi ʻia i 120% strain (like me ke kuhikuhi o ka lawe ʻana i ka uku) a mālama i 60% o kā lākou hopena o kēia manawa mua. ʻO kēia ka transistor carbon-based maopopo loa a hiki i kēia manawa, a hāʻawi ia i ke au lawa e hoʻokele i kahi LED inorganic.
I mea e hiki ai i nā electrodes graphene hiki ke hoʻolōʻihi ʻia me ka ʻāpana nui, ua koho mākou i ka graphene i ulu ʻia me ka CVD ma ka foil Cu. Ua kau ʻia ka foil Cu ma waenakonu o kahi paipu quartz CVD e ʻae i ka ulu ʻana o ka graphene ma nā ʻaoʻao ʻelua, e hana ana i nā ʻano G/Cu/G. No ka hoʻoili ʻana i ka graphene, ua milo mua mākou i kahi papa lahilahi o ka poly(methyl methacrylate) (PMMA) e pale i kekahi ʻaoʻao o ka graphene, a mākou i kapa ai ʻo topside graphene (ʻo ka hope no kekahi ʻaoʻao o ka graphene), a ma hope iho, ua hoʻomoʻa ʻia ke kiʻiʻoniʻoni holoʻokoʻa (PMMA/top graphene/Cu/bottom graphene) i loko o ka hopena (NH4)2S2O8 e ʻoki i ka foil Cu. ʻO ka graphene ʻaoʻao lalo me ka ʻole o ka uhi PMMA e loaʻa nā māwae a me nā hemahema e hiki ai i kahi etchant ke komo ma o (36, 37). E like me ka mea i hōʻike ʻia ma ke Kiʻi 1A, ma lalo o ka hopena o ka ʻili o ka ʻili, ua ʻōwili ʻia nā kikowaena graphene i hoʻokuʻu ʻia i loko o nā ʻōwili a ma hope iho ua hoʻopili ʻia ma luna o ke kiʻiʻoniʻoni top-G/PMMA i koe. Hiki ke hoʻoili ʻia nā ʻōwili luna-G/G ma luna o kekahi substrate, e like me SiO2/Si, aniani, a i ʻole polymer palupalu. ʻO ka hana hou ʻana i kēia kaʻina hana hoʻoili i nā manawa he nui ma luna o ka substrate like e hāʻawi i nā ʻano MGG.
(A) Kiʻi hoʻolālā o ke kaʻina hana hana no MGGs ma ke ʻano he electrode hiki ke hoʻolōʻihi ʻia. I ka wā o ka hoʻoili ʻana o ka graphene, ua haki ka graphene ma hope o ka foil Cu ma nā palena a me nā hemahema, ua ʻōwili ʻia i loko o nā ʻano like ʻole, a ua hoʻopaʻa pono ʻia ma luna o nā kiʻiʻoniʻoni o luna, e hana ana i nā nanoscrolls. Hōʻike ka kiʻi ʻehā i ka hoʻonohonoho ʻana o MGG. (B a me C) Nā ʻano TEM kiʻekiʻe o kahi monolayer MGG, e kālele ana i ka monolayer graphene (B) a me ka ʻāpana ʻōwili (C), kēlā me kēia. ʻO ka inset o (B) he kiʻi hoʻonui haʻahaʻa e hōʻike ana i ke ʻano holoʻokoʻa o nā monolayer MGGs ma ka grid TEM. ʻO nā insets o (C) nā ʻikepili ikaika i lawe ʻia ma nā pahu rectangular i hōʻike ʻia ma ke kiʻi, kahi o nā mamao ma waena o nā mokulele atomika he 0.34 a me 0.41 nm. (D) Carbon K-edge EEL spectrum me nā piko graphitic π* a me σ* i kapa ʻia. (E) Kiʻi ʻāpana AFM o nā ʻōwili monolayer G/G me kahi ʻikepili kiʻekiʻe ma ka laina kiko melemele. (F a i I) ʻO ka microscopy optical a me ke kiʻi AFM o ka trilayer G me ka ʻole o (F a me H) a me nā ʻōwili (G a me I) ma nā substrates SiO2/Si 300-nm-mānoanoa, kēlā me kēia. Ua lepili ʻia nā ʻōwili a me nā wrinkles e hōʻike i ko lākou ʻokoʻa.
No ka hōʻoia ʻana he graphene ʻōwili nā ʻōwili i ke ʻano, ua hana mākou i nā haʻawina spectroscopy hoʻoili kiʻekiʻe (TEM) a me ka nalowale ikehu electron (EEL) ma nā ʻano ʻōwili monolayer top-G/G. Hōʻike ka Kiʻi 1B i ke ʻano hexagonal o kahi graphene monolayer, a ʻo ka inset he morphology holoʻokoʻa o ke kiʻiʻoniʻoni i uhi ʻia ma kahi lua kalapona hoʻokahi o ka grid TEM. Hoʻopuni ka graphene monolayer i ka hapa nui o ka grid, a ʻike ʻia kekahi mau ʻāpana graphene i ke alo o nā puʻu hexagonal he nui (Kiʻi 1B). Ma ka hoʻonui ʻana i loko o kahi ʻōwili pākahi (Kiʻi 1C), ua ʻike mākou i ka nui o nā palena lattice graphene, me ka mamao lattice ma ka pae o 0.34 a 0.41 nm. Hōʻike kēia mau ana ua ʻōwili ʻia nā ʻāpana i kahi graphite kūpono ʻole, nona ka mamao lattice o 0.34 nm ma ka hoʻopaʻa ʻana o ka papa "ABAB". Hōʻike ka Kiʻi 1D i ka carbon K-edge EEL spectrum, kahi i hoʻomaka ai ka piko ma 285 eV mai ka π* orbital a ʻo kekahi ma kahi o 290 eV ma muli o ka hoʻololi ʻana o ka σ* orbital. Hiki ke ʻike ʻia ʻo ka hoʻopaʻa ʻana o sp2 ka mea nui i loko o kēia ʻano, e hōʻoia ana he graphitic loa nā ʻōwili.
Hāʻawi nā kiʻi microscopy optical a me ka microscopy ikaika atomika (AFM) i ka ʻike i ka hoʻolaha ʻana o nā nanoscrolls graphene i loko o nā MGG (Kiʻi 1, E a i G, a me nā figs. S1 a me S2). Hoʻolaha ʻia nā ʻōwili ma luna o ka ʻili, a piʻi ko lākou nui ma ka mokulele e like me ka nui o nā papa i hoʻopaʻa ʻia. Hoʻopili ʻia nā ʻōwili he nui i loko o nā puʻupuʻu a hōʻike i nā kiʻekiʻe like ʻole ma ka laulā o 10 a 100 nm. He 1 a 20 μm ka lōʻihi a he 0.1 a 1 μm ka laulā, ma muli o ka nui o kā lākou mau ʻāpana graphene mua. E like me ka mea i hōʻike ʻia ma ke Kiʻi 1 (H a me I), ʻoi aku ka nui o nā ʻōwili ma mua o nā wrinkles, e alakaʻi ana i kahi interface ʻoi aku ka paʻakikī ma waena o nā papa graphene.
No ke ana ʻana i nā waiwai uila, ua hoʻohālikelike mākou i nā kiʻiʻoniʻoni graphene me a i ʻole me nā ʻano ʻōwili a me ka hoʻopaʻa ʻana o ka papa i loko o nā ʻāpana 300-μm-ākea a me 2000-μm-lōʻihi me ka hoʻohana ʻana i ka photolithography. Ua ana ʻia nā kū'ē ʻelua-probe ma ke ʻano he hana o ke kaumaha ma lalo o nā kūlana ambient. ʻO ka loaʻa ʻana o nā ʻōwili i hoʻemi i ka resistivity no ka monolayer graphene ma 80% me ka emi ʻana o 2.2% i ka transmittance (fig. S4). Hōʻoia kēia i nā nanoscrolls, nona ka nui o ke au a hiki i ka 5 × 107 A/cm2 (38, 39), e hāʻawi i kahi hāʻawi uila maikaʻi loa i nā MGG. Ma waena o nā mono-, bi-, a me trilayer plain graphene a me MGGs, ʻo ka trilayer MGG ka conductance maikaʻi loa me ka transparency o aneane 90%. No ka hoʻohālikelike ʻana me nā kumu ʻē aʻe o ka graphene i hōʻike ʻia ma nā palapala, ua ana pū mākou i nā pale ʻehā-probe sheet (kiʻi S5) a ua helu iā lākou ma ke ʻano he hana o ka transmittance ma 550 nm (kiʻi S6) ma ke Kiʻi 2A. Hōʻike ʻo MGG i ka conductivity like a ʻoi aku paha ke kiʻekiʻe a me ka transparency ma mua o ka graphene plain multilayer i hoʻopaʻa ʻia a me ka graphene oxide i hoʻemi ʻia (RGO) (6, 8, 18). E hoʻomaopopo he ʻoi aku ka kiʻekiʻe o nā pale ʻana o ka pepa o ka graphene plain multilayer i hoʻopaʻa ʻia mai nā palapala ma mua o kā mākou MGG, ma muli paha o ko lākou mau kūlana ulu i hoʻonui ʻole ʻia a me ke ʻano hoʻoili.
(A) Nā kū'ē'ē pepa ʻehā-probe e kū'ē i ka transmittance ma 550 nm no kekahi mau ʻano graphene, kahi e hōʻike ai nā huinahā ʻeleʻele i nā MGG mono-, bi-, a me trilayer; pili nā pōʻai ʻulaʻula a me nā huinakolu polū me ka graphene maʻemaʻe multilayer i ulu ʻia ma Cu a me Ni mai nā haʻawina a Li et al. (6) a me Kim et al. (8), kēlā me kēia, a ma hope iho ua hoʻoili ʻia ma luna o SiO2/Si a i ʻole quartz; a ʻo nā huinakolu ʻōmaʻomaʻo nā waiwai no RGO ma nā kekelē hoʻemi like ʻole mai ke aʻo ʻana a Bonaccorso et al. (18). (B a me C) Hoʻololi kū'ē maʻamau o nā MGG mono-, bi- a me trilayer a me G ma ke ʻano he hana o ke kaumaha perpendicular (B) a me ke ʻano like (C) i ke kuhikuhi o ke kahe o kēia manawa. (D) Hoʻololi kū'ē maʻamau o ka bilayer G (ʻulaʻula) a me MGG (ʻeleʻele) ma lalo o ka hoʻouka ʻana o ke kaumaha cyclic a hiki i ka 50% o ke kaumaha perpendicular. (E) Hoʻololi kū'ē maʻamau o ka trilayer G (ʻulaʻula) a me MGG (ʻeleʻele) ma lalo o ka hoʻouka ʻana o ke kaumaha cyclic a hiki i ka 90% o ke kaumaha like. (F) Ka loli capacitance maʻamau o ka mono-, bi- a me trilayer G a me bi- a me trilayer MGGs ma ke ʻano he hana o ke kaumaha. ʻO ka inset ka hoʻonohonoho capacitor, kahi o ka substrate polymer ʻo SEBS a ʻo ka papa dielectric polymer ʻo 2-μm-mānoanoa SEBS.
No ka loiloi ʻana i ka hana hilinaʻi o ka MGG, ua hoʻoili mākou i ka graphene ma luna o nā substrates elastomer styrene-ethylene-butadiene-styrene (SEBS) thermoplastic (~2 cm ka laulā a me ~5 cm ka lōʻihi), a ua ana ʻia ka conductivity i ka wā i hoʻolōʻihi ʻia ai ka substrate (e ʻike i nā Mea Hana a me nā Hana) ʻelua perpendicular a like me ke kuhikuhi o ke kahe o kēia manawa (Kiʻi 2, B a me C). Ua hoʻomaikaʻi ʻia ke ʻano uila hilinaʻi o ka strain me ka hoʻohui ʻana o nā nanoscrolls a me ka hoʻonui ʻana i ka nui o nā papa graphene. No ka laʻana, i ka wā e perpendicular ai ke strain i ke kahe o kēia manawa, no ka monolayer graphene, ʻo ka hoʻohui ʻana o nā ʻōwili i hoʻonui i ke strain ma ka haki uila mai 5 a 70%. Ua hoʻomaikaʻi nui ʻia ka hoʻomanawanui strain o ka trilayer graphene i hoʻohālikelike ʻia me ka monolayer graphene. Me nā nanoscrolls, ma 100% perpendicular strain, ua hoʻonui wale ʻia ke kūʻē ʻana o ka trilayer MGG structure ma 50%, i ka hoʻohālikelike ʻana me 300% no ka trilayer graphene me ka ʻole o nā ʻōwili. Ua noiʻi ʻia ka loli kūʻē ma lalo o ka hoʻouka ʻana o ka strain cyclic. No ka hoʻohālikelike ʻana (Kiʻi 2D), ua piʻi aʻe nā kūʻē o kahi kiʻiʻoniʻoni graphene bilayer maʻamau ma kahi o 7.5 mau manawa ma hope o ~700 mau pōʻaiapuni ma 50% ke kaumaha perpendicular a hoʻomau i ka piʻi ʻana me ke kaumaha i kēlā me kēia pōʻaiapuni. Ma ka ʻaoʻao ʻē aʻe, ua piʻi wale ke kūʻē o kahi bilayer MGG ma kahi o 2.5 mau manawa ma hope o ~700 mau pōʻaiapuni. Ke kau nei a hiki i ka 90% ke kaumaha ma ke kuhikuhi like, ua piʻi aʻe ke kūʻē o ka trilayer graphene ~100 mau manawa ma hope o 1000 mau pōʻaiapuni, ʻoiai he ~8 mau manawa wale nō ia ma kahi trilayer MGG (Kiʻi 2E). Hōʻike ʻia nā hopena paikikala ma ke kiʻi S7. ʻO ka piʻi wikiwiki ʻana o ke kūʻē ma ke kuhikuhi kaumaha like no ka mea ua perpendicular ke kuhikuhi o nā māwae i ke kuhikuhi o ke kahe o kēia manawa. ʻO ka ʻokoʻa o ke kūʻē i ka wā e hoʻouka ai a hoʻokuʻu i ke kaumaha ma muli o ka hoʻōla viscoelastic o ka substrate SEBS elastomer. ʻO ke kūʻē paʻa o nā ʻāpana MGG i ka wā e paikikala ai ma muli o ke alo o nā ʻōwili nui e hiki ke hoʻopili i nā ʻāpana māwae o ka graphene (e like me ka ʻike ʻia e AFM), e kōkua ana i ka mālama ʻana i kahi ala percolating. Ua hōʻike mua ʻia kēia hanana o ka mālama ʻana i ka conductivity e kahi ala percolating no nā kiʻiʻoniʻoni metala i haki a i ʻole nā ​​​​​​kiʻiʻoniʻoni semiconductor ma nā substrates elastomer (40, 41).
No ka loiloi ʻana i kēia mau kiʻiʻoniʻoni graphene e like me nā electrodes puka i nā mea hiki ke hoʻolōʻihi ʻia, ua uhi mākou i ka papa graphene me kahi papa dielectric SEBS (2 μm ka mānoanoa) a nānā i ka loli capacitance dielectric ma ke ʻano he hana o ke kaumaha (e ʻike i ke Kiʻi 2F a me nā Mea Hoʻohui no nā kikoʻī). Ua ʻike mākou ua emi koke nā capacitances me nā electrodes graphene monolayer maʻamau a me bilayer ma muli o ka nalowale o ka conductivity in-plane o graphene. I ka hoʻohālikelike ʻana, ua hōʻike nā capacitances i hoʻopaʻa ʻia e MGGs a me ka graphene trilayer maʻamau i ka hoʻonui ʻana o ka capacitance me ke kaumaha, kahi i manaʻo ʻia ma muli o ka emi ʻana o ka mānoanoa dielectric me ke kaumaha. Ua kūlike loa ka hoʻonui ʻana i ka capacitance i manaʻo ʻia me ka hoʻolālā MGG (kiʻi S8). Hōʻike kēia he kūpono ʻo MGG ma ke ʻano he electrode puka no nā transistors hiki ke hoʻolōʻihi ʻia.
No ka noiʻi hou ʻana i ke kuleana o ka ʻōwili graphene 1D ma ke ahonui o ka conductivity uila a me ka hoʻomalu maikaʻi ʻana i ka hoʻokaʻawale ʻana ma waena o nā papa graphene, ua hoʻohana mākou i nā CNT i uhi ʻia i ka spray e pani i nā ʻōwili graphene (e ʻike i nā Mea Hoʻohui). No ka hoʻohālike ʻana i nā ʻano MGG, ua waiho mākou i ʻekolu mau densities o CNTs (ʻo ia hoʻi, CNT1
(A a i C) Nā kiʻi AFM o ʻekolu mau ʻano like ʻole o nā CNT (CNT1
I mea e hoʻomaopopo hou aku ai i ko lākou hiki ke lilo i mau electrodes no nā mea uila hiki ke hoʻolōʻihi ʻia, ua noiʻi pono mākou i nā morphologies o MGG a me G-CNT-G ma lalo o ke kaumaha. ʻAʻole maikaʻi nā ʻano hana ʻano ʻo ka microscopy optical a me ka scanning electron microscopy (SEM) no ka mea ʻaʻole i loaʻa nā ʻokoʻa kala a ua pili ka SEM i nā mea hana kiʻi i ka wā o ka scanning electron i ka wā e kau ai ka graphene ma nā substrates polymer (kiʻi S9 a me S10). No ka nānā ʻana i ka ʻili graphene ma lalo o ke kaumaha, ua hōʻiliʻili mākou i nā ana AFM ma nā MGG trilayer a me ka graphene maʻemaʻe ma hope o ka hoʻoili ʻana i nā substrates SEBS lahilahi loa (~0.1 mm ka mānoanoa) a me ka elastic. Ma muli o nā hemahema intrinsic i loko o ka CVD graphene a me ka hōʻino extrinsic i ka wā o ke kaʻina hana hoʻoili, hana ʻia nā māwae ma luna o ka graphene i hoʻopaʻa ʻia, a me ka hoʻonui ʻana o ke kaumaha, ua lilo nā māwae i ʻoi aku ka nui (Kiʻi 4, A a i D). Ma muli o ke ʻano stacking o nā electrodes carbon-based, hōʻike nā māwae i nā morphologies like ʻole (kiʻi S11) (27). ʻOi aku ka liʻiliʻi o ka nui o ka ʻāpana māwae (i wehewehe ʻia he ʻāpana māwae/ʻāpana i kālailai ʻia) o ka graphene multilayer ma mua o ka graphene monolayer ma hope o ke kānana ʻana, kahi mea e kūlike me ka hoʻonui ʻana o ka conductivity uila no MGGs. Ma ka ʻaoʻao ʻē aʻe, ʻike pinepine ʻia nā ʻōwili e hoʻopili i nā māwae, e hāʻawi ana i nā ala conductive hou aʻe i loko o ke kiʻiʻoniʻoni i kānana ʻia. No ka laʻana, e like me ka mea i hōʻailona ʻia ma ke kiʻi o ke Kiʻi 4B, ua hele kahi ʻōwili ākea ma luna o kahi māwae i loko o ka MGG trilayer, akā ʻaʻohe ʻōwili i ʻike ʻia ma ka graphene maʻemaʻe (Kiʻi 4, E a H). Pēlā nō, ua hoʻopili pū nā CNT i nā māwae i loko o ka graphene (kiʻi S11). Ua hōʻuluʻulu ʻia ka nui o ka ʻāpana māwae, ka nui o ka ʻāpana ʻōwili, a me ka ʻoʻoleʻa o nā kiʻiʻoniʻoni ma ke Kiʻi 4K.
(A a i H) Nā kiʻi AFM ma kahi o nā ʻōwili trilayer G/G (A a i D) a me nā ʻano trilayer G (E a ​​i H) ma kahi elastomer SEBS lahilahi loa (~0.1 mm ka mānoanoa) ma 0, 20, 60, a me 100% ke kaumaha. Kuhikuhi ʻia nā māwae a me nā ʻōwili me nā pua. Aia nā kiʻi AFM āpau ma kahi ʻāpana o 15 μm × 15 μm, me ka hoʻohana ʻana i ka pā unahi kala like e like me ka mea i lepili ʻia. (I) Ke ʻano hoʻohālikelike o nā electrodes graphene monolayer patterned ma ka substrate SEBS. (J) Palapala ʻāina contour simulation o ke kaumaha logarithmic nui loa i loko o ka graphene monolayer a me ka substrate SEBS ma 20% ke kaumaha waho. (K) Hoʻohālikelike o ka nui o ka ʻāpana māwae (kolamu ʻulaʻula), ka nui o ka ʻāpana ʻōwili (kolamu melemele), a me ka ʻōʻili o ka ʻili (kolamu polū) no nā ʻano graphene like ʻole.
Ke kīkoʻo ʻia nā kiʻiʻoniʻoni MGG, aia kekahi ʻano hana koʻikoʻi hou e hiki ai i nā ʻōwili ke hoʻopili i nā ʻāpana māwae o ka graphene, e mālama ana i kahi pūnaewele percolating. He mea hoʻohiki nā ʻōwili graphene no ka mea hiki iā lākou ke lōʻihi he ʻumi micrometers a no laila hiki ke hoʻopili i nā māwae i hiki ke piʻi i ka pae micrometer. Eia kekahi, no ka mea, aia nā ʻōwili i nā papa he nui o ka graphene, manaʻo ʻia he haʻahaʻa ko lākou kū'ē. I ka hoʻohālikelike ʻana, pono nā pūnaewele CNT paʻa (haʻahaʻa ka transmittance) e hāʻawi i ka hiki ke hoʻopili conductive like, ʻoiai he liʻiliʻi nā CNT (ʻo ka maʻamau he mau micrometers ka lōʻihi) a emi ka conductive ma mua o nā ʻōwili. Ma ka ʻaoʻao ʻē aʻe, e like me ka mea i hōʻike ʻia ma ke kiʻi S12, ʻoiai ke haki nei ka graphene i ka wā e kīkoʻo ana e hoʻokipa i ke kaumaha, ʻaʻole haki nā ʻōwili, e hōʻike ana e paheʻe ana paha ka mea hope ma luna o ka graphene ma lalo. ʻO ke kumu i ʻole ai lākou e haki, ʻo ia paha ma muli o ke ʻano i ʻōwili ʻia, i haku ʻia me nā papa he nui o ka graphene (~1 a 2 0 μm ka lōʻihi, ~0.1 a 1 μm ka laulā, a me ~10 a 100 nm ke kiʻekiʻe), nona ka modulus kūpono kiʻekiʻe ma mua o ka graphene papa hoʻokahi. E like me ka hōʻike a Green lāua ʻo Hersam (42), hiki i nā pūnaewele CNT metala (ke anawaena o ka paipu o 1.0 nm) ke hoʻokō i nā pale pepa haʻahaʻa <100 ohms/sq ʻoiai ke kū'ē nui o ka hui ʻana ma waena o nā CNT. Ke noʻonoʻo nei he laulā o 0.1 a 1 μm kā mākou mau ʻōwili graphene a ʻoi aku ka nui o nā wahi pili o nā ʻōwili G/G ma mua o nā CNT, ʻaʻole pono e kaupalena ʻia ke kū'ē pili a me ka wahi pili ma waena o nā ʻōwili graphene a me nā graphene e nā mea e mālama ai i ka conductivity kiʻekiʻe.
ʻOi aku ka kiʻekiʻe o ka modulus o ka graphene ma mua o ka substrate SEBS. ʻOiai ʻoi aku ka haʻahaʻa o ka mānoanoa o ka electrode graphene ma mua o ka substrate, ʻo ka paʻakikī o ka graphene i hoʻonui ʻia kona mānoanoa e like me ko ka substrate (43, 44), e hopena ana i kahi hopena mokupuni paʻa. Ua hoʻohālike mākou i ka deformation o kahi graphene 1-nm-mānoanoa ma kahi substrate SEBS (e ʻike i nā Mea Hoʻohui no nā kikoʻī). Wahi a nā hopena simulation, i ka wā e hoʻopili ʻia ai ka 20% strain i ka substrate SEBS ma waho, ʻo ka awelika strain i loko o ka graphene he ~6.6% (Kiʻi 4J a me ke kiʻi S13D), kahi e kūlike me nā nānā hoʻokolohua (e ʻike i ke kiʻi S13). Ua hoʻohālikelike mākou i ke strain i loko o nā ʻāpana graphene a me nā substrate i hoʻohālikelike ʻia me ka hoʻohana ʻana i ka microscopy optical a ua ʻike ʻia ke strain ma ka ʻāpana substrate he ʻelua paha ka strain ma ka ʻāpana graphene. Hōʻike kēia e hiki ke hoʻopaʻa nui ʻia ke strain i hoʻopili ʻia ma nā ʻano electrode graphene, e hana ana i nā mokupuni paʻa graphene ma luna o SEBS (26, 43, 44).
No laila, ʻo ka hiki o nā electrodes MGG ke mālama i ka conductivity kiʻekiʻe ma lalo o ke kaumaha kiʻekiʻe e hiki paha i nā ʻano hana nui ʻelua: (i) Hiki i nā ʻōwili ke hoʻopili i nā ʻāpana i hoʻokaʻawale ʻia e mālama i kahi ala percolation conductive, a (ii) hiki i nā pepa graphene multilayer / elastomer ke paheʻe ma luna o kekahi i kekahi, e hopena ana i ka emi ʻana o ke kaumaha ma nā electrodes graphene. No nā papa he nui o ka graphene i hoʻoili ʻia ma ka elastomer, ʻaʻole i pili pono nā papa kekahi i kekahi, kahi e paheʻe ai i ka pane ʻana i ke kaumaha (27). Ua hoʻonui pū nā ʻōwili i ka ʻoʻoleʻa o nā papa graphene, kahi e kōkua ai i ka hoʻonui ʻana i ka hoʻokaʻawale ʻana ma waena o nā papa graphene a no laila e hiki ai ke paheʻe o nā papa graphene.
Ua ʻimi nui ʻia nā mea hana kalapona āpau ma muli o ke kumukūʻai haʻahaʻa a me ke kiʻekiʻe o ka throughput. I ko mākou hihia, ua hana ʻia nā transistors kalapona āpau me ka hoʻohana ʻana i kahi puka graphene lalo, kahi pilina kumu/kahe graphene luna, kahi semiconductor CNT i hoʻonohonoho ʻia, a me SEBS ma ke ʻano he dielectric (Kiʻi 5A). E like me ka mea i hōʻike ʻia ma ke Kiʻi 5B, ʻoi aku ka opaque o kahi mea hana kalapona āpau me nā CNT ma ke ʻano he kumu/kahe a me ka puka (mea hana lalo) ma mua o ka mea hana me nā electrodes graphene (mea hana luna). ʻO kēia no ka mea e koi ana nā pūnaewele CNT i nā mānoanoa nui a, no laila, nā transmittances optical haʻahaʻa e hoʻokō i nā pale pepa e like me ka graphene (kiʻi S4). Hōʻike ka Kiʻi 5 (C a me D) i nā piʻo hoʻoili a me nā puka ma mua o ke kaumaha no kahi transistor i hana ʻia me nā electrodes bilayer MGG. ʻO ka laulā o ke kahawai a me ka lōʻihi o ka transistor unstrained he 800 a me 100 μm, kēlā me kēia. ʻOi aku ka nui o ka lakio on/off i ana ʻia ma mua o 103 me nā kahe on a off ma nā pae o 10−5 a me 10−8 A, kēlā me kēia. Hōʻike ka piʻo hoʻopuka i nā ʻano linear a me ka saturation kūpono me ka hilinaʻi ʻana o ka gate-voltage maopopo, e hōʻike ana i ka pilina kūpono ma waena o nā CNT a me nā electrodes graphene (45). Ua ʻike ʻia ke kū'ē ʻana o ka pilina me nā electrodes graphene he haʻahaʻa ma mua o ka mea me ka ʻili Au i hoʻoheheʻe ʻia (e nānā i ke kiʻi S14). ʻO ka saturation mobility o ka transistor stretchable ma kahi o 5.6 cm2/Vs, like me ka mea o nā transistors CNT i hoʻokaʻawale ʻia e ka polymer ma nā substrates Si paʻa me 300-nm SiO2 ma ke ʻano he papa dielectric. Hiki ke hoʻomaikaʻi hou ʻia ka mobility me ka density tube i hoʻonui ʻia a me nā ʻano paipu ʻē aʻe (46).
(A) Ka hoʻolālā o ka transistor hiki ke hoʻolōʻihi ʻia e pili ana i ka graphene. SWNTs, nā nanotubes kalapona hoʻokahi paia. (B) Kiʻi o nā transistors hiki ke hoʻolōʻihi ʻia i hana ʻia me nā electrodes graphene (luna) a me nā electrodes CNT (lalo). ʻIke maopopo ʻia ka ʻokoʻa o ka transparency. (C a me D) Nā piʻo hoʻoili a me ka hoʻopuka ʻana o ka transistor e pili ana i ka graphene ma SEBS ma mua o ke kaumaha. (E a ​​me F) Nā piʻo hoʻoili, ke au a me ke au pio, ka lakio on/off, a me ka neʻe ʻana o ka transistor e pili ana i ka graphene ma nā ʻano like ʻole.
I ka wā i hoʻolōʻihi ʻia ai ka hāmeʻa aniani, āpau-kalapona i ke kuhikuhi e like me ke kuhikuhi o ka lawe ʻana i ka uku, ua ʻike ʻia ka emi iki ʻana a hiki i ka 120% strain. I ka wā o ka hoʻolōʻihi ʻana, ua emi mau ka mobility mai 5.6 cm2/Vs ma 0% strain a i 2.5 cm2/Vs ma 120% strain (Kiʻi 5F). Ua hoʻohālikelike pū mākou i ka hana transistor no nā lōʻihi like ʻole o ke kahawai (e nānā i ka papa S1). ʻIke ʻia, ma kahi strain e like me ka nui o 105%, ua hōʻike mau kēia mau transistors āpau i kahi ratio on/off kiʻekiʻe (>103) a me ka mobility (>3 cm2/Vs). Eia kekahi, ua hōʻuluʻulu mākou i nā hana hou a pau ma nā transistors āpau-kalapona (e nānā i ka papa S2) (47–52). Ma ka hoʻomaikaʻi ʻana i ka hana ʻana o nā hāmeʻa ma nā elastomers a me ka hoʻohana ʻana iā MGGs ma ke ʻano he mau pilina, hōʻike kā mākou transistors āpau-kalapona i ka hana maikaʻi ma ke ʻano o ka mobility a me ka hysteresis a me ka hiki ke hoʻolōʻihi ʻia.
Ma ke ʻano he noi o ka transistor moakaka piha a hiki ke hoʻolōʻihi ʻia, ua hoʻohana mākou ia mea e kāohi i ka hoʻololi ʻana o kahi LED (Kiʻi 6A). E like me ka mea i hōʻike ʻia ma ke Kiʻi 6B, hiki ke ʻike maopopo ʻia ka LED ʻōmaʻomaʻo ma o ka hāmeʻa kalapona āpau hiki ke hoʻolōʻihi ʻia i kau ʻia ma luna pono. ʻOiai e hoʻolōʻihi ana i ~100% (Kiʻi 6, C a me D), ʻaʻole e loli ka ikaika o ke kukui LED, kahi e kūlike me ka hana transistor i wehewehe ʻia ma luna (e ʻike i ke kiʻiʻoniʻoni S1). ʻO kēia ka hōʻike mua o nā ʻāpana hoʻomalu hiki ke hoʻolōʻihi ʻia i hana ʻia me ka hoʻohana ʻana i nā electrodes graphene, e hōʻike ana i kahi hiki hou no nā mea uila hiki ke hoʻolōʻihi ʻia o graphene.
(A) Kaapuni o kahi transistor e hoʻokele i ka LED. GND, honua. (B) Kiʻi o ka transistor kalapona āpau hiki ke hoʻolōʻihi a moakaka ma 0% strain i kau ʻia ma luna o kahi LED ʻōmaʻomaʻo. (C) ʻO ka transistor kalapona āpau a moakaka i hoʻohana ʻia e hoʻololi i ka LED e kau ʻia ana ma luna o ka LED ma 0% (hema) a me ~100% strain (ʻākau). Kuhikuhi nā pua keʻokeʻo e like me nā māka melemele ma ka hāmeʻa e hōʻike i ka loli mamao e hoʻolōʻihi ʻia ana. (D) ʻIke ʻaoʻao o ka transistor i hoʻolōʻihi ʻia, me ka LED i hoʻokomo ʻia i loko o ka elastomer.
I ka hopena, ua hoʻomohala mākou i kahi ʻano graphene conductive moakaka e mālama ana i ka conductivity kiʻekiʻe ma lalo o nā ʻano nui e like me nā electrodes stretchable, i hiki ai i nā nanoscrolls graphene ma waena o nā papa graphene i hoʻopaʻa ʻia. Hiki i kēia mau ʻano electrode MGG bi- a me trilayer ma kahi elastomer ke mālama i ka 21 a me 65%, kēlā me kēia, o kā lākou conductivities strain 0% ma kahi ʻano e like me 100%, i hoʻohālikelike ʻia me ka nalowale piha o ka conductivity ma 5% strain no nā electrodes graphene monolayer maʻamau. ʻO nā ala conductive hou aʻe o nā ʻōwili graphene a me ka launa pū nāwaliwali ma waena o nā papa i hoʻoili ʻia e kōkua i ka paʻa conductivity kiʻekiʻe ma lalo o ke ʻano. Ua hoʻopili hou mākou i kēia ʻano graphene e hana i nā transistors stretchable carbon āpau. I kēia manawa, ʻo ia ka transistor graphene-based stretchable loa me ka transparency maikaʻi loa me ka hoʻohana ʻole ʻana i ka buckling. ʻOiai ua hana ʻia ke aʻo ʻana i kēia manawa e hiki ai i ka graphene no nā electronics stretchable, ke manaʻoʻiʻo nei mākou e hiki ke hoʻonui ʻia kēia ʻano i nā mea 2D ʻē aʻe e hiki ai i nā electronics stretchable 2D.
Ua ulu ʻia ka graphene CVD nui ma luna o nā foil Cu i hoʻokuʻu ʻia (99.999%; Alfa Aesar) ma lalo o ke kaomi mau o 0.5 mtorr me 50-SCCM (kenimita cubic maʻamau i kēlā me kēia minuke) CH4 a me 20-SCCM H2 ma ke ʻano he precursors ma 1000°C. Ua uhi ʻia nā ʻaoʻao ʻelua o ka foil Cu e ka graphene monolayer. Ua uhi ʻia kahi papa lahilahi o PMMA (2000 rpm; A4, Microchem) ma kekahi ʻaoʻao o ka foil Cu, e hana ana i kahi ʻano PMMA/G/Cu foil/G. ma hope iho, ua hoʻomoʻa ʻia ke kiʻiʻoniʻoni holoʻokoʻa i loko o ka hopena 0.1 M ammonium persulfate [(NH4)2S2O8] no kahi o 2 mau hola e ʻoki ai i ka foil Cu. I loko o kēia kaʻina hana, ua haehae mua ka graphene hope i pale ʻole ʻia ma nā palena palaoa a laila ʻōwili i loko o nā ʻōwili ma muli o ke kaumaha o ka ʻili. Ua hoʻopili ʻia nā ʻōwili ma luna o ke kiʻiʻoniʻoni graphene luna i kākoʻo ʻia e PMMA, e hana ana i nā ʻōwili PMMA/G/G. Ma hope iho, ua holoi ʻia nā kiʻiʻoniʻoni i loko o ka wai deionized i nā manawa he nui a kau ʻia ma luna o kahi substrate i manaʻo ʻia, e like me ka SiO2/Si paʻa a i ʻole ka substrate plastic. I ka wā i maloʻo ai ke kiʻiʻoniʻoni i hoʻopili ʻia ma luna o ka substrate, ua hoʻomoʻa ʻia ka laʻana i loko o ka acetone, 1:1 acetone/IPA (isopropyl alcohol), a me IPA no 30 kekona e wehe i ka PMMA. Ua hoʻomehana ʻia nā kiʻiʻoniʻoni ma 100°C no 15 min a i ʻole mālama ʻia i loko o kahi vacuum i ka pō e wehe loa i ka wai i paʻa ma mua o ka hoʻoili ʻia ʻana o kahi papa ʻē aʻe o ka ʻōwili G/G ma luna. ʻO kēia kaʻina hana e pale aku i ka wehe ʻana o ke kiʻiʻoniʻoni graphene mai ka substrate a hōʻoia i ka uhi piha ʻana o MGGs i ka wā e hoʻokuʻu ʻia ai ka papa lawe PMMA.
Ua nānā ʻia ke ʻano o ka hoʻonohonoho ʻana o MGG me ka hoʻohana ʻana i kahi microscope optical (Leica) a me kahi microscope electron scanning (1 kV; FEI). Ua hoʻohana ʻia kahi microscope ikaika atomika (Nanoscope III, Digital Instrument) ma ke ʻano tapping e nānā i nā kikoʻī o nā ʻōwili G. Ua hoʻāʻo ʻia ka transparency film e kahi spectrometer ultraviolet-visible (Agilent Cary 6000i). No nā hoʻokolohua i ka wā e pili ana ke ʻano i ke kuhikuhi perpendicular o ke kahe o kēia manawa, ua hoʻohana ʻia ka photolithography a me ka plasma O2 e hoʻohālike i nā ʻano graphene i loko o nā ʻāpana (~300 μm ka laulā a me ~2000 μm ka lōʻihi), a ua waiho ʻia nā electrodes Au (50 nm) me ka hoʻohana ʻana i nā pale aka ma nā wēlau ʻelua o ka ʻaoʻao lōʻihi. A laila ua hoʻopili ʻia nā ʻāpana graphene me kahi elastomer SEBS (~2 cm ka laulā a me ~5 cm ka lōʻihi), me ke axis lōʻihi o nā ʻāpana e like me ka ʻaoʻao pōkole o SEBS a ukali ʻia e BOE (buffered oxide etch) (HF:H2O 1:6) etching a me eutectic gallium indium (EGaIn) ma ke ʻano he mau pilina uila. No nā hoʻāʻo ʻana i ke kaumaha like, ua hoʻoili ʻia nā ʻano graphene i hoʻohālikelike ʻole ʻia (~5 × 10 mm) ma luna o nā substrates SEBS, me nā koʻi lōʻihi e like me ka ʻaoʻao lōʻihi o ka substrate SEBS. No nā hihia ʻelua, ua kīkoʻo ʻia ka G holoʻokoʻa (me ka ʻole o nā ʻōwili G)/SEBS ma ka ʻaoʻao lōʻihi o ka elastomer i loko o kahi mea hana lima, a ma kahi, ua ana mākou i ko lākou mau loli kū'ē ma lalo o ke kaumaha ma kahi kahua probe me kahi mea kālailai semiconductor (Keithley 4200-SCS).
Ua hana ʻia nā transistors kalapona āpau hiki ke hoʻolōʻihi ʻia a moakāka hoʻi ma luna o kahi substrate elastic e nā kaʻina hana ma lalo nei e pale aku i ka hōʻino ʻana o ka solvent organik o ka dielectric polymer a me ka substrate. Ua hoʻoili ʻia nā ʻano MGG ma luna o SEBS ma ke ʻano he electrodes puka. No ka loaʻa ʻana o kahi papa dielectric polymer lahilahi like (2 μm ka mānoanoa), ua wili ʻia kahi hopena SEBS toluene (80 mg/ml) ma luna o kahi substrate SiO2/Si i hoʻololi ʻia octadecyltrichlorosilane (OTS) ma 1000 rpm no 1 min. Hiki ke hoʻoili maʻalahi ʻia ke kiʻi dielectric lahilahi mai ka ʻili hydrophobic OTS ma luna o ka substrate SEBS i uhi ʻia me ka graphene i hoʻomākaukau ʻia. Hiki ke hana ʻia kahi capacitor ma ke kau ʻana i kahi electrode luna metala wai (EGaIn; Sigma-Aldrich) e hoʻoholo i ka capacitance ma ke ʻano he hana o ke kaumaha me ka hoʻohana ʻana i ka mika LCR (inductance, capacitance, resistance) (Agilent). ʻO kekahi ʻāpana o ka transistor he mau CNT semiconducting i hoʻokaʻawale ʻia e ka polymer, e hahai ana i nā kaʻina hana i hōʻike mua ʻia (53). Ua hana ʻia nā electrods kumu/hoʻokahe i hoʻohālikelike ʻia ma luna o nā substrates SiO2/Si paʻa. Ma hope mai, ua hoʻopili ʻia nā ʻāpana ʻelua, ʻo dielectric/G/SEBS a me CNTs/patterned G/SiO2/Si, kekahi i kekahi, a ua hoʻomoʻa ʻia i loko o BOE e wehe i ka substrate SiO2/Si paʻa. No laila, ua hana ʻia nā transistors moakaka piha a hiki ke hoʻolōʻihi ʻia. Ua hana ʻia ka hoʻāʻo uila ma lalo o ke kaumaha ma kahi hoʻonohonoho hoʻolōʻihi lima e like me ke ʻano i ʻōlelo ʻia ma luna.
Loaʻa nā mea kōkua no kēia ʻatikala ma http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
kiʻi. S1. Nā kiʻi microscopy optical o ka monolayer MGG ma nā substrates SiO2/Si ma nā hoʻonui like ʻole.
kiʻi. S4. Hoʻohālikelike o nā kū'ē'ē pepa ʻelua-probe a me nā transmittances @550 nm o ka mono-, bi- a me ka trilayer plain graphene (nā huinahā ʻeleʻele), MGG (nā pōʻai ʻulaʻula), a me CNTs (huinakolu polū).
kiʻi. S7. Ka loli kū'ē maʻamau o nā MGG mono- a me bilayer (ʻeleʻele) a me G (ʻulaʻula) ma lalo o ~1000 cyclic strain loading a hiki i ka 40 a me 90% parallel strain, kēlā me kēia.
kiʻi. S10. Kiʻi SEM o ka trilayer MGG ma ka SEBS elastomer ma hope o ke kānana ʻana, e hōʻike ana i kahi keʻa ʻōwili lōʻihi ma luna o kekahi mau māwae.
kiʻi. S12. Kiʻi AFM o ka trilayer MGG ma ka elastomer SEBS lahilahi loa ma 20% strain, e hōʻike ana ua hele kahi ʻōwili ma luna o kahi māwae.
papa S1. Nā neʻe ʻana o nā transistors nanotube kalapona bilayer MGG–hoʻokahi-pā ma nā lōʻihi kahawai like ʻole ma mua a ma hope o ke kaumaha.
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Na Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
Na Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
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