ʻO nā mea ʻelua-dimensional, e like me ka graphene, he uʻi no nā noi semiconductor maʻamau a me nā noi nascent i ka uila uila.Eia nō naʻe, ʻo ka ikaika tensile kiʻekiʻe o ka graphene ka hopena i ka haʻihaʻi ʻana i ka haʻahaʻa haʻahaʻa, e paʻakikī ai ka hoʻohana pono ʻana i kāna mau waiwai uila ma nā mea uila hiki ke hoʻopololei.I mea e hiki ai ke hoʻokō maikaʻi loa i ka hana i hilinaʻi nui ʻia o nā conductors graphene akaka, ua hana mākou i nā graphene nanoscroll ma waena o nā papa graphene i hoʻopaʻa ʻia, i kapa ʻia ʻo multilayer graphene/graphene scrolls (MGGs).Ma lalo o ke koʻikoʻi, ua hoʻopili kekahi mau ʻōwili i nā ʻāpana ʻāpana o ka graphene e mālama i kahi pūnaewele percolating e hiki ai i ka conductivity maikaʻi loa i nā kaha kiʻekiʻe.ʻO Trilayer MGGs i kākoʻo ʻia ma nā elastomers i mālama ʻia he 65% o kā lākou conductance mua ma 100% strain, e kū pololei ana i ke kuhikuhi o ke kahe o kēia manawa, ʻoiai ʻo nā kiʻi ʻoniʻoni trilayer o graphene me ka ʻole o nā nanoscroll i mālama ʻia he 25% wale nō o kā lākou conductance hoʻomaka.ʻO kahi transistor kalapona holoʻokoʻa hiki ke hoʻohana ʻia me ka MGG ma ke ʻano he electrodes i hōʻike i ka transmittance o >90% a mālama ʻia 60% o kāna puka mua i kēia manawa ma 120% strain (e like me ke kuhikuhi o ka lawe uku).Hiki i kēia mau transistors kaona holoʻokoʻa hiki ke hoʻolōʻihi ʻia a ʻalohilohi loa.
He kahua ulu ka Stretchable transparent electronics i loaʻa nā noi koʻikoʻi i nā ʻōnaehana biointegrated kiʻekiʻe (1, 2) a me ka hiki ke hoʻohui pū me nā optoelectronics stretchable (3, 4) e hana i nā robotics palupalu a me nā hōʻike.Hōʻike ʻo Graphene i nā waiwai i makemake nui ʻia o ka mānoanoa atomic, ke aniani kiʻekiʻe, a me ka conductivity kiʻekiʻe, akā ua kāohi ʻia kona hoʻokō ʻana i nā noi stretchable ma muli o kona ʻano e haki i nā mea liʻiliʻi.ʻO ka lanakila ʻana i nā palena mechanical o ka graphene hiki ke hoʻohana i nā hana hou i nā hāmeʻa alohilohi.
ʻO nā waiwai kūʻokoʻa o ka graphene e lilo ia i moho ikaika no ka hanauna hou o nā electrodes conductive transparent (5, 6).Ke hoʻohālikelike ʻia me ka mea hoʻoheheʻe māmā i hoʻohana pinepine ʻia, indium tin oxide [ITO;100 ohms/square (sq) ma 90% transparency ], monolayer graphene i ulu ʻia e ke kinikini mahu (CVD) he hui like o ka pale pale (125 ohms/sq) a me ke aniani (97.4%) (5).Eia kekahi, ʻoi aku ka maʻalahi o nā kiʻi graphene i hoʻohālikelike ʻia me ITO (7).No ka laʻana, ma ka substrate plastic, hiki ke mālama ʻia kona conductance no ka radius piko o ka curvature liʻiliʻi e like me 0.8 mm (8).No ka hoʻonui hou ʻana i kāna hana uila ma ke ʻano he mea hoʻokele maʻalahi, ua hoʻomohala nā hana mua i nā mea graphene hybrid me hoʻokahi -dimensional (1D) nanowires kālā a i ʻole carbon nanotubes (CNTs) (9-11).Eia kekahi, ua hoʻohana ʻia ka graphene e like me nā electrodes no nā semiconductor heterostructural mixed dimensional (e like me 2D bulk Si, 1D nanowires/nanotubes, a me 0D quantum dots) (12), nā transistors maʻalahi, nā pūnaewele lā, a me nā kukui-emitting diodes (LED) (13). –23).
ʻOiai ua hōʻike ʻo graphene i nā hopena hoʻohiki no nā mea uila maʻalahi, ua kaupalena ʻia kāna noi ʻana i nā mea uila hikiwawe e kona mau waiwai mechanical (17, 24, 25);He 340 N/m ka ʻoʻoleʻa i loko o ka mokulele a me ka modulus Young o 0.5 TPa (26).ʻAʻole hāʻawi ka ʻupena kalapona kalapona ikaika i nā mīkini hoʻoheheʻe ikehu no ke kānana i hoʻopili ʻia a no laila hiki ke haki ma lalo o ka 5% strain.No ka laʻana, hiki i ka graphene CVD i hoʻoili ʻia ma luna o kahi substrate elastic polydimethylsiloxane (PDMS) hiki ke mālama i kona conductivity ma lalo o 6% strain (8).Hōʻike ʻia nā helu kumu ʻo ka crumpling a me ka hui ʻana ma waena o nā papa like ʻole e hoʻemi nui i ka ʻoʻoleʻa (26).Ma ka hoʻopaʻa ʻana i ka graphene i loko o nā papa he nui, ua hōʻike ʻia e hiki ke hoʻolōʻihi ʻia kēia graphene bi- a i ʻole trilayer graphene i 30% strain, e hōʻike ana i ka loli kūʻē ʻana he 13 mau manawa liʻiliʻi ma mua o ka monolayer graphene (27).Eia nō naʻe, ʻoi aku ka haʻahaʻa o kēia stretchability ma mua o nā mea hoʻokele stretchable c onductor (28, 29).
He mea koʻikoʻi nā transistors i nā noi stretchable no ka mea hiki iā lākou ke heluhelu i ka sensor maʻalahi a me ka loiloi hōʻailona (30, 31).Hiki i nā transistors ma PDMS me ka graphene multilayer ma ke ʻano he kumu/drain electrodes a me nā mea channel hiki ke mālama i ka hana uila a hiki i ka 5% strain (32), ʻo ia ka mea ma lalo o ka palena liʻiliʻi i koi ʻia (~ 50%) no nā mea hiki ke hoʻohana ʻia nā mea nānā olakino a me ka ʻili uila. 33, 34).I kēia mau lā, ua ʻimi ʻia kahi ala graphene kirigami, a hiki ke hoʻolōʻihi ʻia ka transistor i hoʻopaʻa ʻia e ka wai electrolyte a hiki i ka 240% (35).Eia nō naʻe, pono kēia ʻano i ka graphene i hoʻokuʻu ʻia, kahi mea e paʻakikī ai ke kaʻina hana.
Ma ʻaneʻi, loaʻa iā mākou nā mea hana graphene hiki ke hoʻolōʻihi ʻia ma ka hoʻopili ʻana i nā ʻōwili graphene (~ 1 a 20 μm lōʻihi, ~ 0.1 a 1 μm ākea, a ~ 10 a 100 nm kiʻekiʻe) ma waena o nā papa graphene.Manaʻo mākou e hiki i kēia mau ʻōwili graphene ke hāʻawi i nā ala conductive e hoʻopaʻa i nā māwae i loko o nā pepa graphene, pēlā e mālama ai i ka conductivity kiʻekiʻe ma lalo o ke kaumaha.ʻAʻole pono nā ʻōwili graphene i ka synthesis a i ʻole kaʻina hana;Ua hana maoli ia i ka wā o ke kaʻina hana hoʻoili pulu.Ma ka hoʻohana ʻana i nā ʻōwili multilayer G/G (graphene/graphene) (MGGs) graphene stretchable electrodes (puna/wai a me ka ʻīpuka) a me nā CNT semiconducting, ua hiki iā mākou ke hōʻike i nā transistors kalapona āpau a hiki ke hoʻolōʻihi ʻia i ka 120. % kānana (e like me ke kuhikuhi o ka lawe ʻana i ka uku) a mālama i 60 % o kā lākou huahana mua.ʻO kēia ka transistor e pili ana i ke kalapona ʻālohilohi loa i kēia manawa, a hāʻawi ia i ka manawa kūpono e hoʻokele i kahi LED inorganic.
No ka hoʻohana ʻana i nā electrodes graphene ma kahi ākea ākea, ua koho mākou i ka graphene ulu CVD ma Cu foil.Ua hoʻokuʻu ʻia ka Cu foil ma waenakonu o kahi pahu quartz CVD e ʻae i ka ulu ʻana o ka graphene ma nā ʻaoʻao ʻelua, e hana ana i nā hale G / Cu / G.No ka hoʻoili ʻana i ka graphene, ua wili mua mākou i kahi ʻāpana lahilahi o ka poly(methyl methacrylate) (PMMA) no ka pale ʻana i kekahi ʻaoʻao o ka graphene, a mākou i kapa ai i ka topside graphene (ʻo ia hoʻi no kēlā ʻaoʻao o ka graphene), a ma hope iho, ka graphene. ʻO ke kiʻi ʻoniʻoni holoʻokoʻa (PMMA/graphene kiʻekiʻe/Cu/graphene lalo) ua hoʻonā ʻia i loko o ka solution (NH4)2S2O8 e kāʻili i ka Cu foil.ʻO ka graphene ʻaoʻao lalo me ka uhi ʻole ʻana o ka PMMA e loaʻa nā māwae a me nā hemahema e hiki ai i kahi etchant ke komo i loko (36, 37).E like me ka mea i hōʻike ʻia ma ka Fig. 1A, ma lalo o ka hopena o ka haʻalulu o ka ʻili, ua ʻōwili ʻia nā kikowaena graphene i hoʻokuʻu ʻia i loko o nā ʻōwili a hoʻopili ʻia ma ke kiʻi ʻoniʻoni top-G/PMMA i koe.Hiki ke hoʻololi ʻia nā ʻōwili top-G/G i kekahi substrate, e like me SiO2/Si, aniani, a i ʻole polymer palupalu.ʻO ka hana hou ʻana i kēia kaʻina hoʻololi i nā manawa he nui ma ka substrate hoʻokahi e hāʻawi i nā hale MGG.
(A) Hōʻike kikoʻī o ke kaʻina hana no nā MGG ma ke ʻano he electrode stretchable.I ka wā o ka hoʻoili ʻana i ka graphene, ua haki ʻia ka graphene ʻaoʻao ma luna o Cu foil ma nā palena a me nā hemahema, ʻōwili ʻia i nā ʻano ʻano like ʻole, a hoʻopaʻa paʻa ʻia i nā kiʻiʻoniʻoni luna, e hana ana i nā nanoscrolls.Hōʻike ka pahu kiʻi ʻehā i ke ʻano MGG i hoʻopaʻa ʻia.(B a me C) Nā hiʻohiʻona TEM hoʻonā kiʻekiʻe o kahi MGG monolayer, e kālele ana i ka graphene monolayer (B) a me ka ʻāpana ʻōwili (C).ʻO ka hoʻokomo o (B) he kiʻi hoʻonui haʻahaʻa e hōʻike ana i ka morphology holoʻokoʻa o nā MGG monolayer ma ka pahu TEM.ʻO nā hoʻokomo o (C) nā ʻaoʻao ikaika i lawe ʻia ma nā pahu ʻehā i hōʻike ʻia ma ke kiʻi, kahi o ka mamao ma waena o nā mokulele atomika he 0.34 a me 0.41 nm.(D) Carbon K-edge EEL spectrum me ka graphitic hiʻona π* a me σ* piko i hōʻailona ʻia.(E) Kiʻi ʻāpana AFM o nā ʻōwili monolayer G/G me kahi kiʻekiʻe kiʻekiʻe ma ka laina kiko melemele.(F to I) Optical microscopy a me AFM kiʻi s o trilayer G me ka (F a me H) a me nā ʻōwili (G a me I) ma 300-nm-mānoanoa SiO2/Si substrates, pakahi.Ua hōʻailona ʻia nā ʻōwili a me nā wrinkles e hōʻike i ko lākou ʻokoʻa.
No ka hōʻoia ʻana ua ʻōwili ʻia nā ʻōwili i ka graphene ma ke ʻano, ua alakaʻi mākou i nā haʻawina spectroscopy uila hoʻonā kiʻekiʻe (TEM) a me ka electron energy loss (EEL) spectroscopy ma nā hale monolayer top-G/G scroll structures.Hōʻike ka Figure 1B i ke ʻano hexagonal o kahi graphene monolayer, a ʻo ka inset he morphology holoʻokoʻa o ke kiʻi i uhi ʻia ma ka lua kalapona hoʻokahi o ka mākia TEM.ʻO ka graphene monolayer ka hapa nui o ka mākia, a ʻike ʻia kekahi mau graphene flakes i mua o nā pūʻulu hexagonal apo (Fig. 1B).Ma ka hoʻonui ʻana i loko o kahi ʻōwili pākahi (Fig. 1C), ʻike mākou i ka nui o ka graphene lattice fringes, me ka lattice spacing ma waena o 0.34 a 0.41 nm.Hōʻike kēia mau ana ua ʻōwili wale ʻia nā flakes a ʻaʻole ia he graphite maikaʻi loa, nona ka lattice spacing o 0.34 nm i ka papa "ABAB".Hōʻike ka Kiʻi 1D i ke kikoo carbon K-edge EEL, kahi i puka mai ai ka piko ma 285 eV mai ka orbital π* a ʻo kekahi ma kahi o 290 eV ma muli o ka hoʻololi ʻana o ka orbital σ*.Hiki ke ʻike ʻia ka mana o ka hoʻopaʻa ʻana o sp2 ma kēia ʻano, e hōʻoia ana he kiʻi kiʻi kiʻi loa nā ʻōwili.
Hāʻawi nā kiʻi optical microscopy a me atomic force microscopy (AFM) i ka ʻike i ka hāʻawi ʻana i nā nanoscroll graphene i nā MGG (Fig. 1, E a G, a me nā fig. S1 a me S2).Hoʻokaʻawale wale ʻia nā ʻōwili ma luna o ka ʻili, a piʻi like ka nui o ko lākou in -plane i ka helu o nā papa i hoʻopaʻa ʻia.Hoʻopili ʻia nā ʻōwili he nui i loko o nā puʻupuʻu a hōʻike i nā kiʻekiʻe like ʻole ma ka laulā o 10 a 100 nm.ʻO 1 a 20 μm ka lōʻihi a me 0.1 a 1 μm ākea, e pili ana i ka nui o kā lākou graphene flakes mua.E like me ka mea i hōʻike ʻia ma ka Fig. 1 (H a me I), ʻoi aku ka nui o nā ʻōwili ma mua o nā wrinkles, e alakaʻi ana i kahi pilina ʻoi aku ka paʻakikī ma waena o nā papa graphene.
No ke ana ʻana i nā waiwai uila, ua hoʻohālike mākou i nā kiʻi ʻoniʻoni graphene me ka ʻole o nā hale ʻōwili a hoʻopaʻa ʻia i ka papa i loko o nā ʻāpana 300-μm-ākea a me 2000-μm-lōʻihi me ka photolithography.Ua ana ʻia nā kūʻē kūʻē ʻelua-probe ma ke ʻano he hana o ke kānana ma lalo o nā kūlana ambient.ʻO ka loaʻa ʻana o nā ʻōwili i hōʻemi i ka resistivity no ka monolayer graphene e 80% me ka emi ʻana o 2.2% wale nō i ka transmittance (fig. S4).Hōʻoia kēia i nā nanoscrolls, he kiʻekiʻe ka nui o kēia manawa a hiki i ka 5 × 107 A / cm2 (38, 39), e hana i kahi hāʻawi uila maikaʻi loa i nā MGG.Ma waena o nā mono-, bi-, a me trilayer plain graphene a me MGGs, ʻo ka trilayer MGG ka mea maikaʻi loa o ka conductance me ka ʻike o ka aneane 90%.No ka hoʻohālikelikeʻana me nā kumu'ē aʻe o ka graphene i hōʻikeʻia ma ka palapala, ua ana mākou i nā pale pale paleʻehā (fig. S5) a heluʻia lākou ma keʻano he hana o ka transmittance ma 550 nm (fig. S6) ma Fig. 2A.Hōʻike ʻo MGG i ka hoʻohālikelike a ʻoi aku ka ʻoi aku o ka conductivity a me ka ʻike maopopo ma mua o ka graphene maʻemaʻe multila yer i hoʻopaʻa ʻia a hoʻemi ʻia ka graphene oxide (RGO) (6, 8, 18).E hoʻomanaʻo, ʻoi aku ka kiʻekiʻe o ka pale o ka graphene paʻa multilayer i hoʻopaʻa ʻia ma mua o kā mākou MGG, ma muli paha o ko lākou kūlana ulu ʻole a me ke ʻano hoʻololi.
(A) ʻEhā mau ʻāpana pepa kūʻē kūʻē i ka transmittance ma 550 nm no kekahi mau ʻano graphene, kahi e hōʻike ai nā ʻāpana ʻeleʻele i nā MGG mono-, bi-, a me trilayer;ʻO nā pōʻai ʻulaʻula a me nā huinakolu polū e pili ana me ka graphene ākea multilayer i ulu ma Cu a me Ni mai nā haʻawina o Li et al.(6) a me Kim et al.(8), kēlā me kēia, a hoʻoili ʻia ma ka SiO2/Si a i ʻole quartz;a ʻo nā triangles ʻōmaʻomaʻo nā waiwai no RGO ma nā pae hoʻohaʻahaʻa like ʻole mai ke aʻo ʻana o Bonaccorso et al.( 18).(B a me C) Hoʻololi kūpaʻa maʻamau o mono-, bi- a me trilayer MGGs a me G ma ke ʻano he hana o ke kānana perpendicular (B) a me ka parallel (C) i ke kuhikuhi o ke kahe o kēia manawa.(D) Hoʻololi kūpaʻa maʻamau o ka bilayer G (ʻulaʻula) a me ka MGG (ʻeleʻele) ma lalo o ka cyclic strain e hoʻouka ana a hiki i 50% perpendicular strain.(E) Hoʻololi kūpaʻa maʻamau o ka trilayer G (ʻulaʻula) a me ka MGG (ʻeleʻele) ma lalo o ka cyclic strain hoʻouka a hiki i 90% parallel strain.(F) Hoʻololi capacitance maʻamau o ka mono-, bi- a me trilayer G a me bi- a me trilayer MGG ma ke ʻano he hana o ke kānana.ʻO ka inset ka capacitor structure, kahi o ka polymer substrate he SEBS a ʻo ka polymer dielectric layer ka SEBS 2-μm-mānoanoa.
No ka loiloi ʻana i ka hana i hilinaʻi ʻia o ka MGG, ua hoʻololi mākou i ka graphene ma luna o ka thermoplastic elastomer styrene-ethylene-butadiene-styrene (SEBS) substrates (~ 2 knm ākea a ~ 5 knm ka lōʻihi), a ua ana ʻia ka conductivity i ka wā i hohola ʻia ai ka substrate. (e nānā i nā mea hana a me nā ʻano hana) ʻelua a me ke ʻano like me ke kuhikuhi o ke kahe o kēia manawa (Fig. 2, B a me C).Ua hoʻomaikaʻi ʻia ka hana uila pili i ka strain me ka hoʻohui ʻana o nā nanoscrolls a me ka hoʻonui ʻana i ka helu o nā papa graphene.No ka laʻana, i ka wā e kū pono ai ke kānana i ke kahe o kēia manawa, no ka graphene monolayer, ua hoʻonui ka hoʻohui ʻana o nā ʻōwili i ke koʻikoʻi i ka haki ʻana o ka uila mai 5 a 70%.Hoʻomaikaʻi maikaʻi ʻia ka hoʻomanawanui ʻana o ka trilayer graphene i hoʻohālikelike ʻia me ka graphene monolayer.Me nā nanoscrolls, ma ka 100% perpendicular strain, ua hoʻonui wale ʻia ke kū'ē o ka trilayer MGG structure e 50%, i ka hoʻohālikelike ʻana me 300% no ka trilayer graphene me ka ʻole o nā ʻōwili.Ua noiʻi ʻia ka hoʻololi kūʻē ʻana ma lalo o ka cyclic strain loading.No ka hoʻohālikelike (Fig. 2D), ua hoʻonui nā kū'ē o kahi kiʻi graphene bilayer maʻamau ma kahi o 7.5 mau manawa ma hope o ~700 cycles ma 50% perpendicular strain a hoʻomau i ka hoʻonui ʻana me ke koʻikoʻi i kēlā me kēia pōʻai.Ma ka ʻaoʻao ʻē aʻe, ua hoʻonui ʻia ke kūʻē ʻana o kahi bilayer MGG ma kahi o 2.5 mau manawa ma hope o ~700 cycles.Ke noi nei i ka 90% strain ma ke ala like, ua hoʻonui ʻia ke kū'ē o ka trilayer graphene ~ 100 manawa ma hope o 1000 cycles, ʻoiai he ~ 8 mau manawa i kahi trilayer MGG (Fig. 2E).Hōʻike ʻia nā hopena kaʻa kaʻa ma ka fig.S7.ʻOi aku ka wikiwiki o ka piʻi ʻana o ke kūʻē ma ka ʻaoʻao kuʻi like ʻole no ka mea, ʻo ke kuhikuhi ʻana o nā māwae e pili pono ana i ka ʻaoʻao o ke kahe o kēia manawa.ʻO ka hoʻokaʻawale ʻana o ke kūpaʻa i ka wā o ka hoʻouka ʻana a me ka wehe ʻana i ke kaumaha ma muli o ka viscoelastic recovery o SEBS elastomer substrate.ʻO ke kūpaʻa paʻa o nā ʻāpana MGG i ka wā kaʻa kaʻa ma muli o ka loaʻa ʻana o nā ʻōwili nui e hiki ke hoʻopaʻa i nā ʻāpana māwae o ka graphene (e like me ka nānā ʻana e AFM), e kōkua ana i ka mālama ʻana i ke ala percolating.Ua hōʻike mua ʻia kēia ʻano o ka mālama ʻana i ka conductivity e kahi ala percolating no nā metala māwae a i ʻole nā kiʻi ʻoniʻoni semiconductor ma nā substrates elastomer (40, 41).
No ka loiloi ʻana i kēia mau kiʻi ʻoniʻoni graphene e like me nā electrodes ʻīpuka i nā mea hiki ke hoʻopaʻa ʻia, ua uhi mākou i ka papa graphene me kahi papa dielectric SEBS (2 μm mānoanoa) a nānā i ka hoʻololi capacitance dielectric ma ke ʻano he hana o ke kānana (e nānā i ka Fig. 2F a me nā mea hoʻohui. nā kikoʻī).Ua ʻike mākou ua emi koke nā capacitances me ka monolayer a me ka bilayer graphene electrodes ma muli o ka nalowale o ka conductivity in-plane o graphene.I ka hoʻohālikelike ʻana, ua hōʻike ʻia nā capacitances gated e MGGs a me ka plain trilayer graphene i ka piʻi ʻana o ka capacitance me ke koʻikoʻi, i manaʻo ʻia ma muli o ka emi ʻana o ka mānoanoa dielectric me ke kānana.ʻO ka hoʻonui i manaʻo ʻia o ka capacitance i kūpono loa me ka hoʻolālā MGG (fig. S8).Hōʻike kēia he kūpono ʻo MGG ma ke ʻano he electrode puka no nā transistors stretchable.
No ka noiʻi hou ʻana i ke kuleana o ka ʻōwili graphene 1D i ka hoʻomanawanui ʻana o ka conductivity uila a ʻoi aku ka maikaʻi o ka mālama ʻana i ka kaʻawale ʻana ma waena o nā papa graphene, ua hoʻohana mākou i nā CNT i uhi ʻia e pani i nā ʻōwili graphene (e ʻike i nā Mea Hoʻohui).No ka hoʻohālikelike ʻana i nā hale MGG, waiho mākou i ʻekolu density o CNTs (ʻo ia hoʻi, CNT1
(A i C) nā kiʻi AFM o ʻekolu mau ʻano like ʻole o nā CNTs (CNT1
No ka hoʻomaopopo hou ʻana i ko lākou hiki ke like me nā electrodes no nā uila uila, ua noiʻi ʻōnaehana mākou i nā morphologies o MGG a me G-CNT-G ma lalo o ke koʻikoʻi.ʻAʻole maikaʻi ke ʻano o ka microscopy optical a me ka scanning electron microscopy (SEM) no ka mea ʻaʻole ʻelua ʻokoʻa waihoʻoluʻu a pili ʻo SEM i nā kiʻi kiʻi i ka wā e hoʻopaʻa ʻia ai ka graphene ma nā substrate polymer (fig. S9 a me S10).No ka nānā ʻana i ka ʻili graphene ma lalo o ke kānana, ua hōʻiliʻili mākou i nā ana AFM ma nā MGG trilayer a me ka graphene maʻemaʻe ma hope o ka hoʻololi ʻana i nā substrate SEBS lahilahi loa (~ 0.1 mm mānoanoa).Ma muli o nā hemahema i loko o ka CVD graphene a me ka pōʻino o waho i ka wā o ka hoʻoili ʻana, hiki ke hana ʻia nā māwae ma luna o ka graphene i hoʻopaʻa ʻia, a me ka hoʻonui ʻana i ke koʻikoʻi, ua ʻoi aku ka denser (Fig. 4, A i D).Ma muli o ka hoʻopaʻa ʻana o nā electrodes e pili ana i ke kalapona, hōʻike nā māwae i nā morphologies like ʻole (fig. S11) (27).ʻOi aku ka liʻiliʻi o ka ʻāpana māwae (i wehewehe ʻia ʻo ka ʻāpana māwae/wahi i hoʻopaʻa ʻia) o ka graphene multilayer ma mua o ka graphene monolayer ma hope o ke kānana, i kūlike me ka piʻi ʻana o ka conductivity uila no nā MGG.Ma ka ʻaoʻao ʻē aʻe, ʻike pinepine ʻia nā ʻōwili e hoʻopili i nā māwae, e hāʻawi ana i nā ala conductive hou i ke kiʻi ʻoniʻoni.No ka laʻana, e like me ka lepili ma ke kiʻi o Fig. 4B, ua hele kekahi ʻōwili ākea ma luna o kahi māwae o ka trilayer MGG, akā ʻaʻohe ʻōwili i ʻike ʻia ma ka graphene maʻamau (Fig. 4, E a i H).Pēlā nō, hoʻopili pū nā CNT i nā māwae i ka graphene (fig. S11).Ua hōʻuluʻulu ʻia ka mānoanoa o ka māwae, ka ʻāpana ʻōwili, a me ka ʻawaʻawa o nā kiʻiʻoniʻoni ma Fig. 4K.
(A i H) Ma kahi kiʻi AFM o nā ʻōwili trilayer G/G (A a i D) a me nā hale trilayer G (E a i H) ma kahi SEBS lahilahi loa (~ 0.1 mm mānoanoa) elastomer ma 0, 20, 60, a me 100 % kaohi.Kuhi ʻia nā māwae a me nā ʻōwili me nā pua.Aia nā kiʻi AFM a pau ma kahi o 15 μm × 15 μm, me ka hoʻohana ʻana i ka pā kala kala like me ka lepili.(I) ʻO ka hoʻohālikelike ʻana o nā electrodes graphene monolayer ma ka substrate SEBS.(J) Ka palapala 'āina hoʻohālikelike o ke kumu logarithmic koʻikoʻi loa i loko o ka graphene monolayer a me ka substrate SEBS ma 20% kaila waho.(K) Ka hoʻohālikelike ʻana o ka ʻāpana māwae (ke kolamu ʻulaʻula), ka nui o ka ʻāpana ʻōwili (ke kolamu melemele), a me ka ʻeleʻele o ka ʻili (ke kolamu uliuli) no nā hale graphene like ʻole.
Ke hohola ʻia nā kiʻi ʻoniʻoni MGG, aia kekahi ʻano hana hou e hiki ai i nā ʻōwili ke hoʻopaʻa i nā ʻāpana o ka graphene, e mālama ana i kahi pūnaewele percolating.He ʻoiaʻiʻo ka graphene scrolls no ka mea hiki iā lākou ke ʻumi micrometers ka lōʻihi a no laila hiki ke hoʻopaʻa i nā māwae maʻamau a hiki i ka unahi micrometer.Eia kekahi, no ka mea aia nā ʻōwili i nā multilayers o ka graphene, ua manaʻo ʻia he haʻahaʻa haʻahaʻa.I ka hoʻohālikelike ʻana, koi ʻia nā ʻupena CNT e hāʻawi i ka hiki ke hoʻohālikelike conductive bridging, ʻoiai ʻoi aku ka liʻiliʻi o nā CNT (maʻamau he mau micrometers ka lōʻihi) a ʻoi aku ka liʻiliʻi o ka conductive ma mua o nā ʻōwili.Ma kekahi ʻaoʻao, e like me ka mea i hōʻike ʻia ma ka fig.S12, ʻoiai ua māhā ka graphene i ka wā e hoʻolōʻihi ʻia ai e hoʻokipa i ke kaumaha, ʻaʻole nahā nā ʻōwili, e hōʻike ana e paheʻe ana ka hope ma ka graphene lalo.ʻO ke kumu ʻaʻole lākou e haki ʻia ma muli paha o ke ʻano o ka ʻōwili ʻia, i haku ʻia me nā papa he nui o ka graphene (~ 1 a 2 0 μm ka lōʻihi, ~ 0.1 a 1 μm ākea, a ~ 10 a 100 nm kiʻekiʻe), nona ka kiʻekiʻe. he modulus ʻoi aku ka maikaʻi ma mua o ka graphene papa hoʻokahi.E like me ka hōʻike ʻana e Green a me Hersam (42), hiki i nā ʻupena CNT metala (ke anawaena paipu o 1.0 nm) ke hoʻokō i nā pale haʻahaʻa haʻahaʻa <100 ohms/sq ʻoiai ke kūpaʻa nui o ka hui ma waena o nā CNT.I ka noʻonoʻo ʻana he 0.1 a i ka 1 μm ka laulā o kā mākou scroll graphene a ʻoi aku ka nui o nā wahi hulina G / G ma mua o nā CNTs, ʻaʻole pono ka hoʻopili ʻana i ke kūpaʻa a me ka wahi pili ma waena o nā graphene a me nā ʻōwili graphene e kaupalena i nā mea e mālama ai i ka conductivity kiʻekiʻe.
ʻOi aku ka nui o ka modulus o ka graphene ma mua o ka SEBS substrate.ʻOiai ʻoi aku ka haʻahaʻa o ka mānoanoa kūpono o ka graphene electrode ma mua o ka substrate, ʻo ka ʻoʻoleʻa o ka manawa graphene kona mānoanoa e hoʻohālikelike ʻia me ko ka substrate (43, 44), ka hopena i ka hopena o ka mokupuni ʻoʻoleʻa.Hoʻohālikelike mākou i ka deformation o kahi graphene 1-nm-mānoanoa ma kahi substrate SEBS (e ʻike i nā Mea Hoʻohui no nā kikoʻī).E like me nā hopena hoʻohālikelike, i ka wā e hoʻohanaʻia ai ka 20% strain i ka SEBS substrate ma waho,ʻo ka maʻamau maʻamau i ka graphene he ~ 6.6% (Fig. 4J a me ka fig. S13D), i kūlike me nāʻike hoʻokolohua (e nānā i ka fig. S13). .Ua hoʻohālikelike mākou i ke koʻikoʻi i loko o ka graphene i hoʻohālikelike ʻia a me nā ʻāpana substrate me ka hoʻohana ʻana i ka microscopy optical a ʻike ʻia ke koʻikoʻi ma ka ʻāpana substrate ʻoi aku ka liʻiliʻi ʻelua o ke kānana ma ka ʻāina graphene.Hōʻike kēia i hiki ke hoʻopaʻa ʻia ke kānana i hoʻohana ʻia ma nā ʻano electrode graphene, e hana ana i nā mokupuni ʻoʻoleʻa graphene ma luna o SEBS (26, 43, 44).
No laila, ʻo ka hiki o nā electrodes MGG ke mālama i ka conductivity kiʻekiʻe ma lalo o ke koʻikoʻi kiʻekiʻe e hiki ke hoʻohana ʻia e nā mīkini nui ʻelua: (i) Hiki i nā ʻōwili ke hoʻopaʻa i nā wahi i hoʻokaʻawale ʻia no ka mālama ʻana i kahi ala percolation conductive, a (ii) hiki i ka multilayer graphene sheets/elastomer ke paheʻe. ma luna o kekahi i kekahi, e hoʻemi ana i ke kaumaha ma nā electrodes graphene.No nā papa he nui o ka graphene i hoʻoili ʻia ma ka elastomer, ʻaʻole i hoʻopili ikaika ʻia nā papa me kekahi, hiki ke paheʻe i ka pane ʻana i ke koʻikoʻi (27).Ua hoʻonui pū nā ʻōwili i ke ʻano o nā papa graphene, hiki ke kōkua i ka hoʻonui ʻana i ka hoʻokaʻawale ʻana ma waena o nā papa graphene a no laila hiki ke hoʻoheheʻe ʻia nā papa graphene.
Hoʻoikaika ʻia nā mea hana kalapona āpau ma muli o ke kumu kūʻai haʻahaʻa a me ka hana kiʻekiʻe.I kā mākou hihia, ua hana ʻia nā transistors kalapona āpau me ka ʻīpuka graphene lalo, kahi kumu graphene kiʻekiʻe / hoʻopili wai, kahi semiconductor CNT i hoʻokaʻawale ʻia, a me SEBS ma ke ʻano he dielectric (Fig. 5A).E like me ka mea i hōʻike ʻia ma ka Fig. 5B, ʻoi aku ka opaque o kahi mea kalapona āpau me nā CNT ma ke ʻano he kumu/wai a me ka puka (mea lalo) ʻoi aku ka opaque ma mua o ka mea me nā electrodes graphene (luna luna).ʻO kēia no ka mea e koi ana nā ʻupena CNT i nā mānoanoa nui aʻe, a no laila, ʻoi aku ka haʻahaʻa haʻahaʻa o nā transmittances no ka loaʻa ʻana o nā pale pale e like me ka graphene (fig. S4).Hōʻike ka Kiʻi 5 (C a me D) i ka hoʻololi ʻana a me nā pihi puka ma mua o ke kānana no kahi transistor i hana ʻia me nā electrodes MGG bilayer.ʻO ka laulā a me ka lōʻihi o ka transistor unstrained he 800 a me 100 μm.ʻOi aku ka nui o ka ratio on/off i ana ʻia ma mua o 103 me nā au a me nā ʻauwaha ma nā pae o 10−5 a me 10−8 A.Hōʻike ka pihi puka i nā regime linear a me ka sa turration kūpono me ka hilinaʻi o ka puka-voltage, e hōʻike ana i ka pilina kūpono ma waena o nā CNT a me nā electrodes graphene (45).Ua ʻike ʻia ka haʻahaʻa o ka hoʻopili ʻana me nā electrodes graphene ma mua o kēlā me ke kiʻi ʻoniʻoni Au i hoʻoheheʻe ʻia (e nānā i ka fig. S14).ʻO ka mobility saturation o ka transistor stretchable ma kahi o 5.6 cm2/Vs, e like me ka like me ka polymer-sorted CNT transistors ma nā substrates paʻa Si me 300-nm SiO2 ma ke ʻano he papa dielectric.Hiki ke hoʻomaikaʻi hou aku i ka neʻe ʻana me ka nui o ka paipu i hoʻopaʻa ʻia a me nā ʻano paipu ʻē aʻe (46).
(A) Papahana o ka transistor stretchable ma muli o ka graphene.Nā SWNT, nā nanotubes kalapona pā hoʻokahi.(B) ʻO ke kiʻi o nā transistors hiki ke hana ʻia me nā electrodes graphene (luna) a me nā electrodes CNT (lalo).ʻIke maopopo ʻia ka ʻokoʻa o ka ʻike.(C a me D) Hoʻololi a me nā pihi puka o ka transistor ma muli o ka graphene ma SEBS ma mua o ke kānana.(E a me F) Hoʻololi i nā ʻōpuni, a me waho o kēia manawa, ratio on/off, a me ka neʻe ʻana o ka transistor hoʻokumu i ka graphene ma nā kaha like ʻole.
I ka wā i hohola ʻia ai ka mea ʻālohilohi, nā kalapona āpau i ka ʻaoʻao e like me ke kuhikuhi o ka lawe ʻana, ua ʻike ʻia ka liʻiliʻi o ka hoʻohaʻahaʻa a hiki i ka 120% strain.I ka wā o ka hoʻolōʻihi ʻana, ua emi mau ka neʻe ʻana mai 5.6 cm2/Vs ma 0% strain i 2.5 cm2/Vs ma 120% strain (Fig. 5F).Ua hoʻohālikelike mākou i ka hana transistor no nā lōʻihi o ke kahawai like ʻole (e ʻike i ka papa S1).ʻO ka mea nui, ma kahi koʻikoʻi e like me 105%, ua hōʻike mau kēia mau transistors āpau i kahi ratio kiʻekiʻe on / off (>103) a me ka neʻe (> 3 cm2 / Vs).Eia hou, ua hōʻuluʻulu mākou i nā hana hou a pau ma nā transistors kalapona āpau (e nānā i ka papa S2) (47–52).Ma ka hoʻonui ʻana i ka hana ʻana o nā hāmeʻa ma luna o nā elastomers a me ka hoʻohana ʻana i nā MGG ma ke ʻano he pili, hōʻike kā mākou transistors-carbon holoʻokoʻa i ka hana maikaʻi ma ke ʻano o ka neʻe ʻana a me ka hysteresis a me ka hikiwawe loa.
Ma ke ʻano he noi no ka transistor akaka a hiki ke hoʻohana ʻia, ua hoʻohana mākou iā ia e hoʻomalu i ka hoʻololi ʻana o kahi LED (Fig. 6A).E like me ka mea i hōʻike ʻia ma ka Fig. 6B, hiki ke ʻike maopopo ʻia ke kukui ʻōmaʻomaʻo ma o ka mea hana kalapona āpau i kau ʻia ma luna pono.ʻOiai e hoʻolōʻihi ana i ~ 100% (Fig. 6, C a me D), ʻaʻole e loli ka ikaika o ke kukui LED, i kūlike me ka hana transistor i hōʻike ʻia ma luna (e nānā i ke kiʻiʻoniʻoni S1).ʻO kēia ka hōʻike mua o nā ʻāpana mana stretchable i hana ʻia me ka hoʻohana ʻana i nā electrodes graphene, e hōʻike ana i kahi hiki hou no ka graphene stretchable electronics.
(A) Kaapuni o kahi transistor e hoʻokele LED.GND, lepo.(B) ʻO ke kiʻi o ka transistor carbon all-carbon hiki ke kikoo a maopopo ma 0% kānana i kau ʻia ma luna o ke kukui ʻōmaʻomaʻo.(C) Ke kau ʻia nei ka transistor transparent a stretchable i hoʻohana ʻia no ka hoʻololi ʻana i ke LED ma luna o ka LED ma 0% (hema) a me ~100% strain (akau).Kuhi ʻia nā pua keʻokeʻo ma ke ʻano o nā māka melemele ma ka hāmeʻa e hōʻike i ka loli ʻana o ka mamao.(D) ʻO ka ʻaoʻao ʻaoʻao o ka transistor i kau ʻia, me ka LED i hoʻokuʻu ʻia i loko o ka elastomer.
I ka hopena, ua hoʻomohala mākou i kahi hanana graphene conductive māmā e mālama i ka conductivity kiʻekiʻe ma lalo o nā kaha nui e like me nā electrodes stretchable, hiki i nā graphene nanoscrolls ma waena o nā papa graphene i hoʻopaʻa ʻia.Hiki i kēia mau hana electrode MGG bi- a me trilayer ma kahi elastomer ke mālama i ka 21 a me ka 65%, kēlā me kēia, o kā lākou 0% strain conductivities ma kahi kānana i kiʻekiʻe e like me 100%, i hoʻohālikelike ʻia me ka pau ʻana o ka conductivity ma 5% kānana no nā electrodes graphene monolayer maʻamau. .ʻO nā ala conductive ʻē aʻe o nā ʻōwili graphene a me ka pilina nāwaliwali ma waena o nā papa i hoʻololi ʻia e kōkua i ka paʻa o ka conductivity ma lalo o ke kaumaha.Hoʻohana hou mākou i kēia ʻano hana graphene e hana i nā transistors hiki ke hoʻolōʻihi ʻia.I kēia manawa, ʻo kēia ka transistor e pili ana i ka graphene me ka ʻoi aku ka maikaʻi me ka ʻole o ka hoʻohana ʻana i ka buckling.ʻOiai ua hana ʻia kēia haʻawina e hiki ai i ka graphene no nā mea uila hiki ke hoʻopololei, ke manaʻoʻiʻo nei mākou hiki ke hoʻonui ʻia kēia ala i nā mea 2D ʻē aʻe e hiki ai i ka uila uila 2D stretchable.
Ua ulu ʻia ka graphene CVD nui ma luna o nā pahu Cu i hoʻokuʻu ʻia (99.999%; Alfa Aesar) ma lalo o ke kaomi mau o 0.5 mtorr me 50-SCCM (kenimika cubic maʻamau i kēlā me kēia minuke) CH4 a me 20-SCCM H2 ma ke ʻano he precursors ma 1000°C.Ua uhi ʻia nā ʻaoʻao ʻelua o ka Cu foil e ka monolayer graphene.Ua wili ʻia kahi ʻāpana lahilahi o PMMA (2000 rpm; A4, Microchem) ma kekahi ʻaoʻao o ka pahu Cu, e hana ana i kahi hoʻolālā PMMA/G/Cu foil/G.a laila, hoʻonā ʻia ke kiʻiʻoniʻoni holoʻokoʻa i loko o ka solution 0.1 M ammonium persulfate [(NH4)2S2O8] no kahi o 2 mau hola e hoʻopau i ka Cu foil.I loko o kēia kaʻina hana, ua haehae mua ka graphene ʻaoʻao hope ʻole i nā palena o ka palaoa a laila ʻōwili ʻia i loko o nā ʻōwili ma muli o ke ʻano o ka ʻili.Ua hoʻopili ʻia nā ʻōwili ma luna o ke kiʻi graphene luna i kākoʻo ʻia e PMMA, e hana ana i nā ʻōwili PMMA/G/G.Holoi ʻia nā kiʻiʻoniʻoni i loko o ka wai deionized i nā manawa he nui a kau ʻia ma luna o kahi substrate i hoʻopaʻa ʻia, e like me ka SiO2/Si paʻa a i ʻole ka substrate plastic.Ma hope o ka maloʻo ʻana o ka kiʻiʻoniʻoni i hoʻopili ʻia ma luna o ka substrate, ua hoʻomoʻi ʻia ka hāpana i ka acetone, 1:1 acetone/IPA (isopropyl alcohol), a me IPA no 30 mau kekona e wehe i ka PMMA.Hoʻomaʻamaʻa ʻia nā kiʻiʻoniʻoni ma 100 ° C no 15 min a i ʻole mālama ʻia i loko o kahi ʻūhā i ka pō e hoʻopau loa i ka wai i hoʻopaʻa ʻia ma mua o ka hoʻoili ʻia ʻana o kahi papa o G/G scroll ma luna.ʻO kēia kaʻina hana e pale aku i ka wehe ʻana o ke kiʻi graphene mai ka substrate a e hōʻoia i ka uhi piha ʻana o nā MGG i ka wā e hoʻokuʻu ʻia ai ka papa lawe lawe PMMA.
Ua ʻike ʻia ka morphology o ka hale MGG me ka microscope optical (Leica) a me kahi microscope electron scanning (1 kV; FEI).Ua hoʻohana ʻia kahi microscope ikaika atomic (Nanoscope III, Digital Instrument) ma ke ʻano paʻi e nānā i nā kikoʻī o nā ʻōwili G.Ua hoʻāʻo ʻia ka ʻike kiʻiʻoniʻoni e kahi spectrometer ʻike ʻia ultraviolet (Agilent Cary 6000i).No nā hoʻāʻo ʻana i ka wā i hele ai ke kānana ma ka ʻaoʻao perpendicular o ke kahe o kēia manawa, ua hoʻohana ʻia ka photolithography a me ka plasma O2 e hoʻohālike i nā hale graphene i loko o nā ʻāpana (~ 300 μm ākea a ~ 2000 μm lōʻihi), a ua waiho ʻia nā electrodes Au (50 nm) me ka wela me ka hoʻohana ʻana. pale aka ma na welau elua o ka aoao loihi.Hoʻopili ʻia nā ʻāpana graphene me kahi elastomer SEBS (~ 2 knm ākea a ~5 knm ka lōʻihi), me ke koʻi lōʻihi o nā ʻili e pili ana i ka ʻaoʻao pōkole o SEBS a ukali ʻia e BOE (buffered oxide etch) (HF:H2O. 1:6) etching a me eutectic gallium indium (EGaIn) ma ke ʻano he mea hoʻopili uila.No nā hoʻāʻo ʻana like, ua hoʻoili ʻia nā graphene structur es (~ 5 × 10 mm) ma luna o nā pani SEBS, me nā koʻi lōʻihi e pili ana i ka ʻaoʻao lōʻihi o ka substrate SEBS.No nā hihia ʻelua, ʻo ka G holoʻokoʻa (me ka ʻole o G scrolls) / SEBS ua hohola ʻia ma ka ʻaoʻao lōʻihi o ka elastomer i loko o kahi hāmeʻa manual, a ma ka wahi, ua ana mākou i kā lākou hoʻololi kūʻē ʻana ma lalo o ke koʻikoʻi ma kahi kahua hoʻokolokolo me kahi mea nānā semiconductor (Keithley 4200). -SCS).
ʻO nā transistors-carbon a pau loa i hiki ke ʻokiʻoki a ʻālohilohi ma luna o kahi substrate elastic i hana ʻia e nā kaʻina hana e pale aku ai i ka pōʻino o ka solvent organik o ka polymer dielectric a me ka substrate.Ua hoʻoili ʻia nā hale MGG ma SEBS ma ke ʻano he electrodes puka.No ka loaʻa ʻana o kahi ʻāpana dielectric polymer kiʻiʻoniʻoni lahilahi (2 μm mānoanoa), ua wili ʻia kahi hopena SEBS toluene (80 mg/ml) ma kahi octadecyltrichlorosilane (OTS) - hoʻololi ʻia ʻo SiO2/Si substrate ma 1000 rpm no 1 min.Hiki ke hoʻololi maʻalahi ke kiʻi ʻoniʻoni dielectric mai ka ʻili OTS hydrophobic ma luna o ka substrate SEBS i uhi ʻia me ka graphene i hoʻomākaukau ʻia.Hiki ke hana ʻia kahi capacitor ma ka waiho ʻana i kahi wai-metala (EGaIn; Sigma-Aldrich) kiʻekiʻe electrode e hoʻoholo ai i ka capacitance ma ke ʻano he hana o ke kānana me ka LCR (inductance, capacitance, resistance) mika (Agilent).ʻO ka ʻāpana ʻē aʻe o ka transistor he mau CNT semiconducting polymer-sorted, ma muli o nā kaʻina hana i hōʻike mua ʻia (53).Ua hana ʻia ke kumu kumu/drain electrod e ma luna o nā substrate SiO2/Si paʻa.Ma hope iho, ua laminated nā ʻāpana ʻelua, dielectric / G / SEBS a me CNTs / patterned G / SiO2 / Si, i kekahi i kekahi, a hoʻomoʻi ʻia i ka BOE e wehe i ka substrate SiO2 / Si paʻa.No laila, ua hana ʻia nā transistors akaka loa a hiki ke hoʻopaʻa ʻia.Ua hana ʻia ka hoʻāʻo uila ma lalo o ke koʻikoʻi ma kahi hoʻonohonoho kikoʻī lima e like me ke ʻano i ʻōlelo ʻia ma luna.
Loaʻa nā mea hoʻohui no kēia ʻatikala ma http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
fig.S1.ʻO nā kiʻi microscopy optical o ka MGG monolayer ma nā substrates SiO2/Si ma nā hoʻonui like ʻole.
fig.S4.Ka hoʻohālikelike ʻana o nā ʻāpana pale ʻelua-probe a me nā transmittances @550 nm o ka mono-, bi- a me ka trilayer plain graphene (nā ʻāpana ʻeleʻele), MGG (nā pōʻai ʻulaʻula), a me nā CNT (huiakolu uliuli).
fig.S7.Hoʻololi kūpaʻa maʻamau o nā MGG mono- a me bilayer (ʻeleʻele) a me G (ʻulaʻula) ma lalo o ~1000 cyclic strain e hoʻouka ana i 40 a me 90% parallel strain, kēlā me kēia.
fig.S10.Kiʻi SEM o ka MGG trilayer ma SEBS elastomer ma hope o ke kānana, e hōʻike ana i kahi keʻa ʻōwili lōʻihi ma luna o kekahi mau māwae.
fig.S12.ʻO ke kiʻi AFM o ka MGG trilayer ma ka SEBS elastomer lahilahi ma 20% kānana, e hōʻike ana ua hele ka ʻōwili ma luna o kahi māwae.
papa S1.Ka neʻe ʻana o ka bilayer MGG–hoʻokahi-paʻa kalapona nanotube transistors ma nā ʻanuʻu lōʻihi like ʻole ma mua a ma hope o ke kānana.
He ʻatikala wehe ʻia kēia i hāʻawi ʻia ma lalo o nā ʻōlelo o ka laikini Creative Commons Attribution-NonCommercial, e ʻae ana i ka hoʻohana ʻana, ka hāʻawi ʻana, a me ka hana hou ʻana i nā ʻano mea like ʻole, inā ʻaʻole i loaʻa ka hoʻohana no ka pono pāʻoihana a hāʻawi ʻia ka hana kumu. haʻi ʻia.
MANAʻO: Ke noi wale nei mākou i kāu leka uila i ʻike ka mea āu e paipai nei i ka ʻaoʻao ua makemake ʻoe e ʻike lākou, ʻaʻole ia he leka uila.ʻAʻole mākou e hopu i kahi leka uila.
ʻO kēia nīnau no ka hoʻāʻo ʻana inā he malihini kanaka ʻoe a ʻaʻole paha a pale i ka hoʻouna ʻana i ka spam automated.
Na Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
Na Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
© 2021 ʻAhahui ʻAmelika no ka holomua o ka ʻepekema.Ua mālama ʻia nā kuleana āpau.He hoa pili o AAAS no HINARI, AGORA, OARE, CHORUS, CLOCKSS, CrossRef a me COUNTER.Science Advances ISSN 2375-2548.
Ka manawa hoʻouna: Jan-28-2021